Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application

Shinyoung Kang, Juyoung Lee, Y. Song
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Abstract

In this paper, an interfacial phase change memory (iPCM) based on superlattice (SL) structure was fabricated by stacking GeTe/Sb2Te3 alternatively, and synaptic characteristics such as linearity and symmetry of long-term potentiation (LTP)/long-term depression (LTD) were measured by Keithley 4200A-CSC parameter analyzer. The conventional phase change memory (PCM) based on Ge-Sb-Te alloy with the identical bottom electrode contact size was also fabricated for comparison.
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人工突触应用界面相变记忆的突触特性研究
本文采用GeTe/Sb2Te3交替堆叠的方法制备了基于超晶格(SL)结构的界面相变存储器(iPCM),并利用Keithley 4200A-CSC参数分析仪测量了长时程增强(LTP)/长时程抑制(LTD)的线性和对称性。并制作了底部电极接触尺寸相同的Ge-Sb-Te合金相变存储器(PCM)。
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