Wootae Lee, Jubong Park, Jungho Shin, J. Woo, Seonghyun Kim, G. Choi, Seungjae Jung, Sangsu Park, Daeseok Lee, E. Cha, H. Lee, S. Kim, Suock Chung, H. Hwang
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引用次数: 65
Abstract
We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>;3×107A/cm2) and high selectivity (~104). The non-linear I-V characteristics can be explained by varistor-type multi-layer tunnel barriers, which were formed by Ta incorporation into thin TiO2. Furthermore, the 1S1R device showed excellent suppression of leakage current (>;104 reduction) at 1/2VREAD, which is promising for ultra-high density resistive memory applications.
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