Guanhua Yang, J. Niu, Congyan Lu, Rongrong Cao, Jiawei Wang, Ying Zhao, X. Chuai, Mengmeng Li, Di Geng, Nianduan Lu, Qi Liu, Ling Li, Ming Liu
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引用次数: 3
Abstract
For the first time, we experimentally prove that MoS2 negative-capacitance field-effect transistor (NCFET) can benefit from device scaling. In the short-channel device (83 nm channel length), ultra-low subthreshold swing (SS) of 17.28 mV/dec minimum and 39 mV/dec in average, is demonstrated without suffering from hysteresis. The average SS (SSave) improvement factor of MoS2 NCFET with respect to reference MoS2 FET, which is quantified by SSave/SSRef., reaches a record-low value of 0.177 among all hysteresis-free 2D NCFETs reported so far. Furthermore, 364 and 26 times improvements of IDS are achieved at VGS = 0 V and 1.5 V, respectively.
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