B. Vrignon, A. Doridant, K. Abouda, Y. Gao, D. Pagnoux, T. Marek
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引用次数: 0
Abstract
Near-field injection at silicon level is a promising method for various areas such as the analysis of radiated immunity to electromagnetic disturbances. Up to now, the research has been mainly focused at PCB level due to the resolution of the near-field probe. This paper presents first investigations of near-field injection on a Safe System Basis Chip at die level. The investigations are focused on one of the regulators included in this IC. The goal is to use the coupling path from 'ultra-high-radiation' to check if the Fail Safe Machine detects correctly the regulator failures during near-field injection. Moreover, simulations help to understand the failure mechanism.
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