E. Alekseev, D. Pavlidis, M. Dickmann, T. Hackbarth
{"title":"W-band InGaAs/InP PIN diode monolithic integrated switches","authors":"E. Alekseev, D. Pavlidis, M. Dickmann, T. Hackbarth","doi":"10.1109/GAAS.1996.567888","DOIUrl":null,"url":null,"abstract":"The design, fabrication, and experimental characteristics of InGaAs PIN diodes are presented for InP-based W-band monolithic integrated switches. The diodes with 10 /spl mu/m-diameter were used and showed a breakdown voltage of 17 V, a turn-on voltage of 0.36 V, and a switching cutoff frequency of 6.3 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PIN monolithic switch demonstrated 25 dB isolation, 1.3 dB insertion loss, and 0.8 dB reflection loss at 83 GHz.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30
Abstract
The design, fabrication, and experimental characteristics of InGaAs PIN diodes are presented for InP-based W-band monolithic integrated switches. The diodes with 10 /spl mu/m-diameter were used and showed a breakdown voltage of 17 V, a turn-on voltage of 0.36 V, and a switching cutoff frequency of 6.3 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PIN monolithic switch demonstrated 25 dB isolation, 1.3 dB insertion loss, and 0.8 dB reflection loss at 83 GHz.
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