A 500 MHz complementary gallium arsenide clock multiplier

V. Mazzotta, D. Foster
{"title":"A 500 MHz complementary gallium arsenide clock multiplier","authors":"V. Mazzotta, D. Foster","doi":"10.1109/GAAS.1996.567899","DOIUrl":null,"url":null,"abstract":"This paper reports a 500 MHz complementary gallium-arsenide (CGaAs/sup TM/) clock multiplier. The design was implemented in Motorola's 0.7 /spl mu/m complementary gallium-arsenide (CGaAs/sup TM/) process. The goal was to demonstrate operation of an on-chip CGaAs/sup TM/ clock multiplier based on a phase-locked loop at low voltage. This design is similar to implementations that have been fabricated with silicon CMOS. However, CMOS implementations require feature sizes of 0.4 /spl mu/m to achieve the same performance as 0.7 /spl mu/m CGaAs/sup TM/. The design demonstrates the flexibility of this process to tune different sections of the circuitry to provide either high performance where necessary with greater than 500 MHz speeds using p-load DCFL designs, or much lower dynamic power consumption using complementary CMOS like designs. This paper discusses the design and implementation of the clock multiplier. Test results are presented. The design measures 1.21 mm/sup 2/, including the fully integrated passive filter. The clock multiplier can lock to and multiply reference signals between frequencies 3.2 MHz and 7.7 MHz. The power dissipation is 15 mW at an input frequency of 5 MHz and a power supply voltage of 1.2 V.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper reports a 500 MHz complementary gallium-arsenide (CGaAs/sup TM/) clock multiplier. The design was implemented in Motorola's 0.7 /spl mu/m complementary gallium-arsenide (CGaAs/sup TM/) process. The goal was to demonstrate operation of an on-chip CGaAs/sup TM/ clock multiplier based on a phase-locked loop at low voltage. This design is similar to implementations that have been fabricated with silicon CMOS. However, CMOS implementations require feature sizes of 0.4 /spl mu/m to achieve the same performance as 0.7 /spl mu/m CGaAs/sup TM/. The design demonstrates the flexibility of this process to tune different sections of the circuitry to provide either high performance where necessary with greater than 500 MHz speeds using p-load DCFL designs, or much lower dynamic power consumption using complementary CMOS like designs. This paper discusses the design and implementation of the clock multiplier. Test results are presented. The design measures 1.21 mm/sup 2/, including the fully integrated passive filter. The clock multiplier can lock to and multiply reference signals between frequencies 3.2 MHz and 7.7 MHz. The power dissipation is 15 mW at an input frequency of 5 MHz and a power supply voltage of 1.2 V.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一个500兆赫互补砷化镓时钟倍增器
本文报道了一种500 MHz互补砷化镓(CGaAs/sup TM/)时钟倍频器。该设计是在摩托罗拉的0.7 /spl mu/m互补砷化镓(CGaAs/sup TM/)工艺中实现的。目标是演示基于锁相环的片上CGaAs/sup TM/时钟乘法器在低电压下的操作。这种设计类似于用硅CMOS制造的实现。然而,CMOS实现需要0.4 /spl mu/m的特征尺寸来实现与0.7 /spl mu/m CGaAs/sup TM/相同的性能。该设计展示了该过程的灵活性,可以调整电路的不同部分,在必要时使用p负载DCFL设计提供大于500 MHz速度的高性能,或者使用互补的CMOS设计提供更低的动态功耗。本文讨论了时钟乘法器的设计与实现。给出了试验结果。该设计尺寸为1.21 mm/sup 2/,包括完全集成的无源滤波器。时钟乘法器可以锁定和乘在频率3.2 MHz和7.7 MHz之间的参考信号。当输入频率为5mhz,电源电压为1.2 V时,功耗为15mw。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Ion-implanted GaAs JFETs with f/sub t/>45 GHz for low-power electronics W-band InGaAs/InP PIN diode monolithic integrated switches A 500 MHz complementary gallium arsenide clock multiplier A 2 GHz 12-bit digital-to-analog converter for direct digital synthesis applications Breakdown effects on the performance and reliability of power MESFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1