{"title":"Electron scattering and related phenomena in SCALPEL/sup TM/","authors":"M. Mkrtchyan","doi":"10.1109/IMNC.2000.872651","DOIUrl":null,"url":null,"abstract":"Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.
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