Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872626
T. Fujimura, S. Etoh, S. Ishikawa, A. Ikeda, R. Hattori, Y. Kuroki
To analyze DNA fragments rapidly and easily will be a most important process in a future DNA industry. This paper reports a new fabrication process and a new device structure for microchip-based capillary electrophoresis (CE) using chemically machinable photosensitive glass substrate. The fabrication process of our device has an advantage in mass production as an inexpensive device. In addition we can easily obtain the high aspect-ratio structure of the channel, which presents high performance in separation characteristics.
{"title":"High aspect-ratio microchip-based capillary electrophoresis device using chemically machinable photosensitive glass substrate","authors":"T. Fujimura, S. Etoh, S. Ishikawa, A. Ikeda, R. Hattori, Y. Kuroki","doi":"10.1109/IMNC.2000.872626","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872626","url":null,"abstract":"To analyze DNA fragments rapidly and easily will be a most important process in a future DNA industry. This paper reports a new fabrication process and a new device structure for microchip-based capillary electrophoresis (CE) using chemically machinable photosensitive glass substrate. The fabrication process of our device has an advantage in mass production as an inexpensive device. In addition we can easily obtain the high aspect-ratio structure of the channel, which presents high performance in separation characteristics.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"12 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120845389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872738
Seong-jong Yoo, Jongho Lee, Hyungcheol Shin
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
{"title":"A new quantum dot formation process using wet etching of poly-Si along grain boundaries","authors":"Seong-jong Yoo, Jongho Lee, Hyungcheol Shin","doi":"10.1109/IMNC.2000.872738","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872738","url":null,"abstract":"We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"58 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126082964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872636
H. Yoshida, T. Nakamura, Y. Kawakami, A. Kawai
DFR (Dry Film Photoresist) is widely used mainly in micro plating process. However as the result of liquid intrusion into substrate/DFR interface, a bird's-beak like "eaves" is formed at bottom of a plating pattern. The purpose of this presentation is to clarify the mechanism of the "eaves" formation by analyzing adhesion energies at the substrate/DFR/liquids threefold.
{"title":"Formation of micro eaves analyzed by energy balance model at threefold of Cu film/DFR/Ni plating solution","authors":"H. Yoshida, T. Nakamura, Y. Kawakami, A. Kawai","doi":"10.1109/IMNC.2000.872636","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872636","url":null,"abstract":"DFR (Dry Film Photoresist) is widely used mainly in micro plating process. However as the result of liquid intrusion into substrate/DFR interface, a bird's-beak like \"eaves\" is formed at bottom of a plating pattern. The purpose of this presentation is to clarify the mechanism of the \"eaves\" formation by analyzing adhesion energies at the substrate/DFR/liquids threefold.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"794 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126954060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872608
H. Kabata, W. Okada, M. Washizu
The restriction enzyme Eco RI is a nanomachine of nature that is a homodimeric protein and has the molecular weight of 60 kDa in the dimer. The physiological function of this machine is degradation of foreign DNA invading cells, and this degradation requires binding to a specific sequence of six base pairs on DNA, GAATTC. Eco RI binds preferably to the GAATTC sequence with the highest affinity to form stable complexes, while binding to other base-pair sequences of DNA with much lower affinity. The difference in the two distinct affinities between sequences, called specificity, enables Eco RI to distinguish the specific GAATTC sequence from flanking nonspecific sequences. The specificity of Eco RI has been applied to in situ optical genome mapping, in which ordered positions of the sequence of interest are visualized along huge chromosomal DNA. Oana et al. has employed photolabeled Eco RI as a landmark for GAATTC sequences to determine their relative positions on asingle DNA molecule in a polyacrylamide solution. Optical mapping with Eco Rl should be facilitated if larger numbers of DNA molecules are stretched, arrayed, and fixed simultaneously, because higher concentrations of DNA enhances binding of the enzyme to DNA and extension of DNA manifests the distance of Eco RI molecules bound onto the DNA from a DNA end. One of the aims of the present study is to show this advantage of an optical mapping with extended DNA.
{"title":"Microscopic demonstration of static- and dynamic-binding of Eco RI enzyme to extended DNA at a single-molecule level","authors":"H. Kabata, W. Okada, M. Washizu","doi":"10.1109/IMNC.2000.872608","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872608","url":null,"abstract":"The restriction enzyme Eco RI is a nanomachine of nature that is a homodimeric protein and has the molecular weight of 60 kDa in the dimer. The physiological function of this machine is degradation of foreign DNA invading cells, and this degradation requires binding to a specific sequence of six base pairs on DNA, GAATTC. Eco RI binds preferably to the GAATTC sequence with the highest affinity to form stable complexes, while binding to other base-pair sequences of DNA with much lower affinity. The difference in the two distinct affinities between sequences, called specificity, enables Eco RI to distinguish the specific GAATTC sequence from flanking nonspecific sequences. The specificity of Eco RI has been applied to in situ optical genome mapping, in which ordered positions of the sequence of interest are visualized along huge chromosomal DNA. Oana et al. has employed photolabeled Eco RI as a landmark for GAATTC sequences to determine their relative positions on asingle DNA molecule in a polyacrylamide solution. Optical mapping with Eco Rl should be facilitated if larger numbers of DNA molecules are stretched, arrayed, and fixed simultaneously, because higher concentrations of DNA enhances binding of the enzyme to DNA and extension of DNA manifests the distance of Eco RI molecules bound onto the DNA from a DNA end. One of the aims of the present study is to show this advantage of an optical mapping with extended DNA.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122809788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872765
T. Tomie, T. Aota, Y. Kurashima, N. Kandaka, H. Yashiro, K. Nishigori, I. Matsushima, M. Komuro
We are proposing a cavity-confined type laser-produced plasma as a debris-less and high conversion efficiency source for EUV lithography. Our idea is devised in order to make the best use of solid target having higher conversion efficiency and easier wavelength tunability than gas targets. In order to overcome the debris problem, two contrivances are made, i.e., ablation of the solid surface by the irradiation of an ultrashort pulse, and enhancement of the ablated mass density by the cavity structure of the target. Preliminary experimental evaluation of the cavity confinement effect and high efficiency EUV emission are reported.
{"title":"Study of a cavity-confined plasma as a debris-less and high conversion efficiency source for EUV lithography","authors":"T. Tomie, T. Aota, Y. Kurashima, N. Kandaka, H. Yashiro, K. Nishigori, I. Matsushima, M. Komuro","doi":"10.1109/IMNC.2000.872765","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872765","url":null,"abstract":"We are proposing a cavity-confined type laser-produced plasma as a debris-less and high conversion efficiency source for EUV lithography. Our idea is devised in order to make the best use of solid target having higher conversion efficiency and easier wavelength tunability than gas targets. In order to overcome the debris problem, two contrivances are made, i.e., ablation of the solid surface by the irradiation of an ultrashort pulse, and enhancement of the ablated mass density by the cavity structure of the target. Preliminary experimental evaluation of the cavity confinement effect and high efficiency EUV emission are reported.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121783955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872750
P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser
Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.
{"title":"Optics for EUV lithography","authors":"P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser","doi":"10.1109/IMNC.2000.872750","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872750","url":null,"abstract":"Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127794193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872653
F. Koba, H. Yamashita, E. Nomura, K. Nakajima, H. Nozue
Electron projection lithography (EPL) techniques, such as SCALPEL and PREVAIL, are expected to be candidates for fabricating 80-nm devices or less. In electron-beam lithography, the proximity effect correction (PEC) is the most critical issue for obtaining sufficient dimension accuracy and good resist pattern profiles. The SCALPEL GHOST method, proposed by Watson et al. (1995), has a remarkable advantage to throughput by doing both the pattern and correction exposures, simultaneously. This method, however, degrades the exposure intensity contrast due to a larger background dose than that in other PEC methods, such as pattern modification. In this paper, we investigate the essential conditions for the SCALPEL GHOST PEC to achieve 80-nm resolution in 100 kV EFL in terms of the exposure intensity contrast.
{"title":"Contrast evaluation of SCALPEL GHOST method in 100 kV electron projection lithography","authors":"F. Koba, H. Yamashita, E. Nomura, K. Nakajima, H. Nozue","doi":"10.1109/IMNC.2000.872653","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872653","url":null,"abstract":"Electron projection lithography (EPL) techniques, such as SCALPEL and PREVAIL, are expected to be candidates for fabricating 80-nm devices or less. In electron-beam lithography, the proximity effect correction (PEC) is the most critical issue for obtaining sufficient dimension accuracy and good resist pattern profiles. The SCALPEL GHOST method, proposed by Watson et al. (1995), has a remarkable advantage to throughput by doing both the pattern and correction exposures, simultaneously. This method, however, degrades the exposure intensity contrast due to a larger background dose than that in other PEC methods, such as pattern modification. In this paper, we investigate the essential conditions for the SCALPEL GHOST PEC to achieve 80-nm resolution in 100 kV EFL in terms of the exposure intensity contrast.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122238867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872645
Y. Kim, Junghyeon Lee, Hanku Cho, J. Moon
We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.
{"title":"Feasibility of new ARC using PECVD for both KrF and ArF lithography","authors":"Y. Kim, Junghyeon Lee, Hanku Cho, J. Moon","doi":"10.1109/IMNC.2000.872645","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872645","url":null,"abstract":"We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127955517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872759
M. Yanagisawa, H. Ogawa, Y. Horiike
This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.
{"title":"Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF6/H2 downstream plasma","authors":"M. Yanagisawa, H. Ogawa, Y. Horiike","doi":"10.1109/IMNC.2000.872759","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872759","url":null,"abstract":"This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121731642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872611
S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya
It is revealed by optical image calculations that iso-focal tilt in phase edge lithography can be corrected by adjustment of primary spherical aberration. Tolerant range of the adjustment is /spl sim/0.02 wave. Moreover, DOF becomes larger than that in ideal optics under corrected spherical aberrations with large RMS-OPD of /spl sim/0.66 wave.
{"title":"Correction of iso-focal tilt in phase edge lithography by adjustment of primary spherical aberration","authors":"S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya","doi":"10.1109/IMNC.2000.872611","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872611","url":null,"abstract":"It is revealed by optical image calculations that iso-focal tilt in phase edge lithography can be corrected by adjustment of primary spherical aberration. Tolerant range of the adjustment is /spl sim/0.02 wave. Moreover, DOF becomes larger than that in ideal optics under corrected spherical aberrations with large RMS-OPD of /spl sim/0.66 wave.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130782760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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