An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS

Brandon Mathieu, J. Mccue, B. Dupaix, V. Patel, S. Dooley, James Wilson, H. M. Lavasani, W. Khalil
{"title":"An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS","authors":"Brandon Mathieu, J. Mccue, B. Dupaix, V. Patel, S. Dooley, James Wilson, H. M. Lavasani, W. Khalil","doi":"10.1109/CSICS.2017.8240434","DOIUrl":null,"url":null,"abstract":"A power- and area-efficient Low Voltage Differential Signaling (LVDS) AC coupled receiver for short links is presented. The receiver accommodates the wide LVDS common-mode range without requiring large, board-mounted AC coupling capacitors or a slow, rail-to-rail input stage. Instead, a small, on-chip coupling capacitance generates a pseudo return-to-zero (RZ) pulse that is latched into the receiver via output feedback to bias switches. This reduces the effects of baseline wander caused by DC imbalanced data streams without the need for encoding or scrambling, while outputting a full-scale CMOS digital signal. The receiver is implemented in a 130 nm SiGe BiCMOS (fT = 200 GHz) technology and is tested with a 100 mV p-p differential PRBS15, demonstrating a BER of < 10−12. The design includes low and high power modes characterized at 8 Gb/s consuming 3.7 mW and at 10 Gb/s consuming 5.1 mW, respectively. A peak efficiency of 0.46 mW/Gb/s is recorded in the low power mode. The design occupies 0.0115 mm2, including the on-chip coupling capacitance.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A power- and area-efficient Low Voltage Differential Signaling (LVDS) AC coupled receiver for short links is presented. The receiver accommodates the wide LVDS common-mode range without requiring large, board-mounted AC coupling capacitors or a slow, rail-to-rail input stage. Instead, a small, on-chip coupling capacitance generates a pseudo return-to-zero (RZ) pulse that is latched into the receiver via output feedback to bias switches. This reduces the effects of baseline wander caused by DC imbalanced data streams without the need for encoding or scrambling, while outputting a full-scale CMOS digital signal. The receiver is implemented in a 130 nm SiGe BiCMOS (fT = 200 GHz) technology and is tested with a 100 mV p-p differential PRBS15, demonstrating a BER of < 10−12. The design includes low and high power modes characterized at 8 Gb/s consuming 3.7 mW and at 10 Gb/s consuming 5.1 mW, respectively. A peak efficiency of 0.46 mW/Gb/s is recorded in the low power mode. The design occupies 0.0115 mm2, including the on-chip coupling capacitance.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在130 nm SiGe BiCMOS中,具有锁存数据偏置的交流耦合10gb /s lvds兼容接收器
提出了一种低功耗、低面积的短链路低压差分信号(LVDS)交流耦合接收机。该接收器可适应宽LVDS共模范围,而不需要大型板载交流耦合电容器或慢轨输入级。相反,一个小的片上耦合电容产生一个伪归零(RZ)脉冲,该脉冲通过对偏置开关的输出反馈锁存到接收器中。这减少了由直流不平衡数据流引起的基线漂移的影响,而不需要编码或置乱,同时输出全尺寸CMOS数字信号。该接收器采用130 nm SiGe BiCMOS (fT = 200 GHz)技术,并使用100 mV p-p差分PRBS15进行了测试,显示误码率< 10−12。该设计包括低功率和高功率模式,分别为8gb /s和10gb /s,功耗分别为3.7 mW和5.1 mW。低功耗模式下的峰值效率为0.46 mW/Gb/s。该设计占地0.0115 mm2,包括片上耦合电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS Raytheon high power density GaN technology UHF power conversion with GaN HEMT class-E2 topologies High speed data converters and their applications in optical communication system
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1