Pub Date : 2017-12-26DOI: 10.1109/CSICS.2017.8240440
A. Latorre-Rey, Ky Merrill, J. Albrecht, M. Saraniti
In order to assess the mechanisms of self-heating observed in GaN HEMTs on Si substrates, we have performed the electro-thermal characterization of an experimental device in terms of the simulation of its DC characteristics through an expanded full band Monte Carlo particle-based simulator self-consistently coupled to an energy balance heat equation for phonons. The accurate temperature profiles obtained for the acoustic and optical phonon modes, showed that the location of the hot spot in the channel is not at the peak of the electric field, but it is shifted towards the drain up to 34nm. Also, the modeled IdVdsVgs space is improved as a result of including the self-heating effects, which modify the charge transport in the active layer of the device through the temperature dependence of the scattering mechanisms considered in the simulations.
{"title":"Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations","authors":"A. Latorre-Rey, Ky Merrill, J. Albrecht, M. Saraniti","doi":"10.1109/CSICS.2017.8240440","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240440","url":null,"abstract":"In order to assess the mechanisms of self-heating observed in GaN HEMTs on Si substrates, we have performed the electro-thermal characterization of an experimental device in terms of the simulation of its DC characteristics through an expanded full band Monte Carlo particle-based simulator self-consistently coupled to an energy balance heat equation for phonons. The accurate temperature profiles obtained for the acoustic and optical phonon modes, showed that the location of the hot spot in the channel is not at the peak of the electric field, but it is shifted towards the drain up to 34nm. Also, the modeled IdVdsVgs space is improved as a result of including the self-heating effects, which modify the charge transport in the active layer of the device through the temperature dependence of the scattering mechanisms considered in the simulations.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116855918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240450
C. Hillman, P. Stupar, Z. Griffith
A new generation of vanadium dioxide phase change switches have been designed, fabricated, and characterized. These switches were designed to dramatically reduce on-state shunt-capacitance associated with the switch's heater while also increasing the off-state resistance. The result is a switch architecture whose channel dimensions can be scaled to increase power handling while maintaining unparalleled low loss. We will present SPST switches with on-state insertion loss < 1dB at 230GHz and power handling of 1W as well as switches with 5W of power handling and only 0.6 dB insertion loss at 67 GHz. We also present a MMIC SPDT switch having insertion loss < 0.6 dB and isolation > 35 dB from DC to 67 GHz while offering 1W power handling. A wide variety of SPNT switch designs is possible with MMW bandwidth. We have not identified any switch technology having reported superior bandwidth and low insertion loss.
{"title":"Scaleable vanadium dioxide switches with submillimeterwave bandwidth: VO2 switches with impoved RF bandwidth and power handling","authors":"C. Hillman, P. Stupar, Z. Griffith","doi":"10.1109/CSICS.2017.8240450","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240450","url":null,"abstract":"A new generation of vanadium dioxide phase change switches have been designed, fabricated, and characterized. These switches were designed to dramatically reduce on-state shunt-capacitance associated with the switch's heater while also increasing the off-state resistance. The result is a switch architecture whose channel dimensions can be scaled to increase power handling while maintaining unparalleled low loss. We will present SPST switches with on-state insertion loss < 1dB at 230GHz and power handling of 1W as well as switches with 5W of power handling and only 0.6 dB insertion loss at 67 GHz. We also present a MMIC SPDT switch having insertion loss < 0.6 dB and isolation > 35 dB from DC to 67 GHz while offering 1W power handling. A wide variety of SPNT switch designs is possible with MMW bandwidth. We have not identified any switch technology having reported superior bandwidth and low insertion loss.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116042812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240475
R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy
In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.
{"title":"Raytheon high power density GaN technology","authors":"R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy","doi":"10.1109/CSICS.2017.8240475","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240475","url":null,"abstract":"In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114403414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240420
SungWon Chung, P. Srivastava, Xi Yang, T. Palacios, Hae-Seung Lee
This paper introduces the recent development of GaN HEMT track-and-hold sampling circuits (THSCs) with a digital post-correction (DPC) technique for emerging applications. Compared to THSCs in silicon technologies, GaN THSCs achieve 20–30 dB higher signal-to-noise ratio (SNR) for a given bandwidth. Nevertheless, GaN THSCs suffer from dynamic nonlinearity due to charge trapping and introduce low-frequency dispersion, thus providing no more than 40–50 dB spurious-free dynamic range (SFDR). Conventional DPC techniques have been used to linearize CMOS data converters with weak memory effects, which is not effective for dynamic nonlinearity correction on GaN HEMT THSCs with deep memory effects. In order to provide dynamic nonlinearity correction on GaN HEMT THSCs for Nyquist bandwidth, the proposed DPC technique based on a truncated Volterra series eliminates DC offset before model parameter extraction and also uses a multi-section input signal for wideband model training. The DPC technique is applied to a 200-MS/s 98-dB SNR GaN THSC with 56.7-dB SFDR for a 12-MHz input and 48.4-dB SFDR for a 98-MHz input. After DPC, the SFDR improves to 77.9 dB at 12 MHz and 82.2 dB at 98 MHz, demonstrating 21.2 dB and 33.8 dB improvement respectively. The GaN THSC with DPC achieves 12.4-bit ENOB with a 98-MHz input, higher than prior CMOS sampling circuits reported to date.
{"title":"Digital post-correction on dynamic nonlinearity in GaN HEMT track-and-hold sampling circuits","authors":"SungWon Chung, P. Srivastava, Xi Yang, T. Palacios, Hae-Seung Lee","doi":"10.1109/CSICS.2017.8240420","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240420","url":null,"abstract":"This paper introduces the recent development of GaN HEMT track-and-hold sampling circuits (THSCs) with a digital post-correction (DPC) technique for emerging applications. Compared to THSCs in silicon technologies, GaN THSCs achieve 20–30 dB higher signal-to-noise ratio (SNR) for a given bandwidth. Nevertheless, GaN THSCs suffer from dynamic nonlinearity due to charge trapping and introduce low-frequency dispersion, thus providing no more than 40–50 dB spurious-free dynamic range (SFDR). Conventional DPC techniques have been used to linearize CMOS data converters with weak memory effects, which is not effective for dynamic nonlinearity correction on GaN HEMT THSCs with deep memory effects. In order to provide dynamic nonlinearity correction on GaN HEMT THSCs for Nyquist bandwidth, the proposed DPC technique based on a truncated Volterra series eliminates DC offset before model parameter extraction and also uses a multi-section input signal for wideband model training. The DPC technique is applied to a 200-MS/s 98-dB SNR GaN THSC with 56.7-dB SFDR for a 12-MHz input and 48.4-dB SFDR for a 98-MHz input. After DPC, the SFDR improves to 77.9 dB at 12 MHz and 82.2 dB at 98 MHz, demonstrating 21.2 dB and 33.8 dB improvement respectively. The GaN THSC with DPC achieves 12.4-bit ENOB with a 98-MHz input, higher than prior CMOS sampling circuits reported to date.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116830534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240439
J. A. García, M. Ruiz, D. Vegas, M. Pampín, A. Mediavilla
This paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are then presented. The potential for a fast dynamic response is validated (with a slew rate over 2 V/nS), while also the feasibility for an appropriate operation without requiring external RF gate driving signals. A solution for approximating a load-insensitive operation is finally exposed.
{"title":"UHF power conversion with GaN HEMT class-E2 topologies","authors":"J. A. García, M. Ruiz, D. Vegas, M. Pampín, A. Mediavilla","doi":"10.1109/CSICS.2017.8240439","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240439","url":null,"abstract":"This paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are then presented. The potential for a fast dynamic response is validated (with a slew rate over 2 V/nS), while also the feasibility for an appropriate operation without requiring external RF gate driving signals. A solution for approximating a load-insensitive operation is finally exposed.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240446
Jianjun Xu, D. Root
This paper reviews applications of artificial neural networks (ANNs) to several distinct problem areas that arise in compound semiconductor device modeling and characterization. Properties and corresponding benefits of ANNs for these applications are presented culminating in an accurate large signal-model of GaN HEMT transistors (with thermal and trapping effects). Smooth functional approximations of device properties and parameters are also illustrated based on unique properties of ANNs. Finally, it is suggested that ANN technology can be quite helpful as a device characterization tool, over and above the obvious utility for multi-dimensional data fitting.
{"title":"Artificial neural networks for compound semiconductor device modeling and characterization","authors":"Jianjun Xu, D. Root","doi":"10.1109/CSICS.2017.8240446","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240446","url":null,"abstract":"This paper reviews applications of artificial neural networks (ANNs) to several distinct problem areas that arise in compound semiconductor device modeling and characterization. Properties and corresponding benefits of ANNs for these applications are presented culminating in an accurate large signal-model of GaN HEMT transistors (with thermal and trapping effects). Smooth functional approximations of device properties and parameters are also illustrated based on unique properties of ANNs. Finally, it is suggested that ANN technology can be quite helpful as a device characterization tool, over and above the obvious utility for multi-dimensional data fitting.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128149297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240447
A. Georgiadis, J. Kimionis, M. Tentzeris
This paper presents the design and experimental results of 3D/inkjet printed circuits operating in millimeter wave frequencies. Millimeter wave technology is particularly suitable for 5G communication systems however it is also associated with a higher cost, and larger time-to-market. 3D/inkjet printing technology presents an exciting alternative to traditional fabrication techniques being cost-efficient, and allowing for rapid prototyping. This paper offers an overview of recent results associated with fully printed planar antennas, lens antennas, millimeter wave interconnects and sensors demonstrating the potential of the technology.
{"title":"3D/Inkjet-printed millimeter wave components and interconnects for communication and sensing","authors":"A. Georgiadis, J. Kimionis, M. Tentzeris","doi":"10.1109/CSICS.2017.8240447","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240447","url":null,"abstract":"This paper presents the design and experimental results of 3D/inkjet printed circuits operating in millimeter wave frequencies. Millimeter wave technology is particularly suitable for 5G communication systems however it is also associated with a higher cost, and larger time-to-market. 3D/inkjet printing technology presents an exciting alternative to traditional fabrication techniques being cost-efficient, and allowing for rapid prototyping. This paper offers an overview of recent results associated with fully printed planar antennas, lens antennas, millimeter wave interconnects and sensors demonstrating the potential of the technology.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121439101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240452
Tuong Nguyen, V. Zomorrodian, Thi Ri Mya Kywe
The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using on-chip spiral inductors and complementary logic control. Accurate linear and non-linear modeling of the switch FETs is integral to the circuit design process and is discussed in some detail.
{"title":"Wideband high power SPDT and SP3T GaN MMIC switches in low-cost overmolded plastic package","authors":"Tuong Nguyen, V. Zomorrodian, Thi Ri Mya Kywe","doi":"10.1109/CSICS.2017.8240452","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240452","url":null,"abstract":"The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using on-chip spiral inductors and complementary logic control. Accurate linear and non-linear modeling of the switch FETs is integral to the circuit design process and is discussed in some detail.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131938945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240454
Wooram Lee, Caglar Ozdag, Yigit Aydogan, J. Plouchart, M. Yeck, A. Cabuk, A. Kepkep, Emre Apaydin, A. Valdes-Garcia
A 94-GHz 16-element phased array transmitter IC in a 130 nm BiCMOS technology is reported. The IC integrates 16 transmitter front ends with two independent outputs, a 1-to-16 power splitter, an IF-to-RF up-converter, a frequency synthesizer with continuous lock detection, an IF/baseband, and digital circuitry including serial interface and front-end memory within an IC size of 6.7 mm × 5.6 mm. A milimeter-wave (mmWave) up-conversion mixer design is introduced which enables a TX output signal-to-LO leakage ratio higher than 35 dB. On-wafer measurements at 94GHz taken at 25°C show IF-to-RF conversion gain of 35 dB, oP1dB of 4 dBm, Psat of 7.8 dBm and 360° phase shift capability per element, with a total power consumption of 3 W. The IC maintains Psat > 6.5 dBm at 94 GHz up to 105 °C.
{"title":"A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with PSAT>6.5 dBm up to 105 °C","authors":"Wooram Lee, Caglar Ozdag, Yigit Aydogan, J. Plouchart, M. Yeck, A. Cabuk, A. Kepkep, Emre Apaydin, A. Valdes-Garcia","doi":"10.1109/CSICS.2017.8240454","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240454","url":null,"abstract":"A 94-GHz 16-element phased array transmitter IC in a 130 nm BiCMOS technology is reported. The IC integrates 16 transmitter front ends with two independent outputs, a 1-to-16 power splitter, an IF-to-RF up-converter, a frequency synthesizer with continuous lock detection, an IF/baseband, and digital circuitry including serial interface and front-end memory within an IC size of 6.7 mm × 5.6 mm. A milimeter-wave (mmWave) up-conversion mixer design is introduced which enables a TX output signal-to-LO leakage ratio higher than 35 dB. On-wafer measurements at 94GHz taken at 25°C show IF-to-RF conversion gain of 35 dB, oP1dB of 4 dBm, Psat of 7.8 dBm and 360° phase shift capability per element, with a total power consumption of 3 W. The IC maintains Psat > 6.5 dBm at 94 GHz up to 105 °C.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132081345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/CSICS.2017.8240463
M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, A. Young, J. Hacker, B. Brar, S.K. Kim, R. Maurer, M. Rodwell
Highly-scaled Indium Phosphide (InP) transistor technologies have bandwidths extending into the terahertz (THz) frequency regime (0.3–3 THz). The high transistor bandwidth can be exploited to both extend circuit operation to THz frequencies and improve system performance at millimeter wave and sub-millimeter wave frequencies. InP heterojunction bipolar transistor (HBT) technologies offer wide bandwidths, high RF power handling and the capability to realize high levels of integration. We review integrated circuit (IC) results from Teledyne's InP HBT technologies that span frequencies from 60 GHz to >600 GHz focusing on performance benefits and applications.
{"title":"THz InP bipolar transistors-circuit integration and applications","authors":"M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, A. Young, J. Hacker, B. Brar, S.K. Kim, R. Maurer, M. Rodwell","doi":"10.1109/CSICS.2017.8240463","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240463","url":null,"abstract":"Highly-scaled Indium Phosphide (InP) transistor technologies have bandwidths extending into the terahertz (THz) frequency regime (0.3–3 THz). The high transistor bandwidth can be exploited to both extend circuit operation to THz frequencies and improve system performance at millimeter wave and sub-millimeter wave frequencies. InP heterojunction bipolar transistor (HBT) technologies offer wide bandwidths, high RF power handling and the capability to realize high levels of integration. We review integrated circuit (IC) results from Teledyne's InP HBT technologies that span frequencies from 60 GHz to >600 GHz focusing on performance benefits and applications.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131522413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：