R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy
{"title":"Raytheon high power density GaN technology","authors":"R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy","doi":"10.1109/CSICS.2017.8240475","DOIUrl":null,"url":null,"abstract":"In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.
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