T. Ong, B. Roman, W. Paulson, J. Lin, C. King, J. Hayden, Y. Ku, C. Fu, M. Luo, C. Philbin, M. Rossow, T. Mele, K. Kemp
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引用次数: 1
Abstract
This paper reports the investigation of low pressure chemical vapor deposition of SiN/sub X/ film for bottom antireflective coating (BARC) application in 0.35 /spl mu/m lithography and below. The SiN/sub X/ material was successfully designed to provide excellent anti-reflective layer which meets various advanced device integration requirements. This BARC process has been found to be manufacturable for deep-UV and I-line lithography.
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