E. Yee, L. Hite, T. Houston, Y. Sheu, Rajan, Rajgopal, C. Shen, J. Hwang, G. Pollack
{"title":"A 1-M bit SRAM on SIMOX material","authors":"E. Yee, L. Hite, T. Houston, Y. Sheu, Rajan, Rajgopal, C. Shen, J. Hwang, G. Pollack","doi":"10.1109/SOI.1993.344546","DOIUrl":null,"url":null,"abstract":"A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration of a 1-M SRAM at 0.8 um is a significant milestone in the evaluation of the technology for fabrication of very large scale integrated circuits.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration of a 1-M SRAM at 0.8 um is a significant milestone in the evaluation of the technology for fabrication of very large scale integrated circuits.<>
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