Experiments and analysis to characterize logic state retention limitations in 28nm process node

2013 IEEE 31st VLSI Test Symposium (VTS) Pub Date : 2013-04-29 DOI:10.1109/VTS.2013.6548879

S. Dasnurkar, A. Datta, M. Abu-Rahma, Hieu Nguyen, Martin Villafana, Hadi Rasouli, Sean Tamjidi, M. Cai, S. Sengupta, P. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, P. Patel, S. Yoon, E. Terzioglu

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Abstract

Mobile devices spend most of the time in standby mode. Supported features and functionalities are increasing in each newer model. With the wide spread adaptation of multitasking in mobile devices, retaining current status and data for all active tasks is critical for user satisfaction. Extending battery life in portable mobile devices necessitates the use of minimum possible energy in standby mode while retaining present states for all active tasks. This paper for the first time, explains the low voltage data-retention failure mechanism in flops. It analyzes the impact of design and process parameters on the data retention failure. Statistical nature of data retention failure is established and validated with extensive Monte-Carlo simulations across various process corners. Finally, silicon measurement from several 28nm industrial mobile chips is presented showing good correlation of retention failure prediction from simulation.

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表征28nm制程节点逻辑状态保留限制的实验与分析

移动设备大部分时间处于待机状态。支持的特性和功能在每个新模型中都在增加。随着多任务在移动设备中的广泛应用，保留所有活动任务的当前状态和数据对于用户满意度至关重要。延长便携式移动设备的电池寿命需要在待机模式下使用尽可能少的能量，同时保持所有活动任务的当前状态。本文首次解释了软盘的低压数据保留失效机制。分析了设计参数和工艺参数对数据保留失效的影响。数据保留失败的统计性质是建立和验证广泛的蒙特卡罗模拟跨各个过程的角落。最后，给出了几种28nm工业移动芯片的硅测量结果，显示了从模拟中预测保留失效的良好相关性。

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2013 IEEE 31st VLSI Test Symposium (VTS)

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