首页 > 最新文献

2013 IEEE 31st VLSI Test Symposium (VTS)最新文献

英文 中文
Path selection based on static timing analysis considering input necessary assignments 基于静态时序分析的路径选择,考虑输入必要的分配
Pub Date : 2013-06-27 DOI: 10.1109/VTS.2013.6548902
Bo Yao, Arani Sinha, I. Pomeranz
We describe a procedure based on an existing static timing analysis tool for selecting path delay faults to target during test generation. The use of an existing static timing analysis tool ensures that a state-of-the-art process can be used for estimating path delays. However, static timing analysis, by itself, can be inaccurate as it does not take into consideration conditions that are necessary for detecting path delay faults. In the proposed method, these conditions are captured as what are called input necessary assignments, which static timing analysis tools are able to use. By providing the static timing analysis process with the input necessary assignments for a selected path, the static timing analysis process can estimate the delay of the path more accurately. It can also identify additional paths whose delays are at least as high as those of the selected paths. Thus, feeding back the input necessary assignments to the static timing analysis process enhances the correlation between static timing analysis and actual timing of tests on silicon. The result is a set of potentially detectable path delay faults associated with critical paths based on more accurate estimates of the path delays that can be exhibited by a test set, compared with the set that would be obtained by static timing analysis alone.
我们描述了一个基于现有静态时序分析工具的过程,用于在测试生成过程中选择目标路径延迟故障。使用现有的静态时序分析工具可以确保使用最先进的过程来估计路径延迟。然而,静态时序分析本身可能不准确,因为它没有考虑检测路径延迟故障所需的条件。在提出的方法中,这些条件被捕获为所谓的输入必要分配,静态时序分析工具能够使用这些分配。通过为静态时序分析过程提供所选路径的输入必要分配,静态时序分析过程可以更准确地估计路径的延迟。它还可以识别延迟至少与所选路径相同的其他路径。因此,将必要的输入赋值反馈给静态时序分析过程,增强了静态时序分析与硅上测试的实际时序之间的相关性。结果是一组潜在可检测的路径延迟故障,这些故障与关键路径相关,基于测试集可以显示的路径延迟的更准确估计,而不是单独通过静态定时分析获得的路径延迟。
{"title":"Path selection based on static timing analysis considering input necessary assignments","authors":"Bo Yao, Arani Sinha, I. Pomeranz","doi":"10.1109/VTS.2013.6548902","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548902","url":null,"abstract":"We describe a procedure based on an existing static timing analysis tool for selecting path delay faults to target during test generation. The use of an existing static timing analysis tool ensures that a state-of-the-art process can be used for estimating path delays. However, static timing analysis, by itself, can be inaccurate as it does not take into consideration conditions that are necessary for detecting path delay faults. In the proposed method, these conditions are captured as what are called input necessary assignments, which static timing analysis tools are able to use. By providing the static timing analysis process with the input necessary assignments for a selected path, the static timing analysis process can estimate the delay of the path more accurately. It can also identify additional paths whose delays are at least as high as those of the selected paths. Thus, feeding back the input necessary assignments to the static timing analysis process enhances the correlation between static timing analysis and actual timing of tests on silicon. The result is a set of potentially detectable path delay faults associated with critical paths based on more accurate estimates of the path delays that can be exhibited by a test set, compared with the set that would be obtained by static timing analysis alone.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130902930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Enhanced algorithm of combining trace and scan signals in post-silicon validation 后硅验证中跟踪与扫描信号结合的改进算法
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548915
Kihyuk Han, Joon-Sung Yang, J. Abraham
As the complexity of integrated circuit design increases and production schedules become shorter, the dependency on post-silicon validation for capturing design errors that escape from pre-silicon verification also increases. A major challenge in post-silicon validation is the limited observability of internal states caused by the limited storage capacity available for post-silicon validation. Recent research has shown that observability can be enhanced if trace and scan signals are combined together, compared with the debugging scenario where only trace signals are monitored. This paper proposes an enhanced and systematic algorithm for the efficient combination of trace and scan signals to maximize the observability of internal circuit states. Experimental results on benchmark circuits show that the proposed technique provides a higher number of restored states compared to the existing techniques.
随着集成电路设计复杂性的增加和生产计划的缩短,对捕获从硅前验证中逃脱的设计错误的硅后验证的依赖也增加了。后硅验证的一个主要挑战是内部状态的有限可观测性,这是由后硅验证可用的有限存储容量引起的。最近的研究表明,与只监控跟踪信号的调试场景相比,将跟踪信号和扫描信号结合在一起可以增强可观测性。本文提出了一种改进的、系统化的跟踪信号和扫描信号有效结合的算法,以最大限度地提高内部电路状态的可观测性。在基准电路上的实验结果表明,与现有技术相比,该技术提供了更多的恢复状态。
{"title":"Enhanced algorithm of combining trace and scan signals in post-silicon validation","authors":"Kihyuk Han, Joon-Sung Yang, J. Abraham","doi":"10.1109/VTS.2013.6548915","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548915","url":null,"abstract":"As the complexity of integrated circuit design increases and production schedules become shorter, the dependency on post-silicon validation for capturing design errors that escape from pre-silicon verification also increases. A major challenge in post-silicon validation is the limited observability of internal states caused by the limited storage capacity available for post-silicon validation. Recent research has shown that observability can be enhanced if trace and scan signals are combined together, compared with the debugging scenario where only trace signals are monitored. This paper proposes an enhanced and systematic algorithm for the efficient combination of trace and scan signals to maximize the observability of internal circuit states. Experimental results on benchmark circuits show that the proposed technique provides a higher number of restored states compared to the existing techniques.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125801690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Special session 11B: Hot topic on-chip clocking — Industrial trends 特别会议11B:片上时钟热点话题-产业趋势
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548942
A. Chandra
A typical design today is implemented with DFT where the capture clocks are supplied on chip. The on-chip controller (OCC) plays a critical role in the application and the quality of the tests. Almost every design house has developed an innovative way of delivering either the structural tests or in house mix of structural-functional tests through the use of OCC and the design-for-test (DFT) implemented on the chip. Complexities in the implementation come due to the various test strategies employed with: • Process variation leading to issues like dealing with non-unique critical paths on every chip • Test data compression becoming primary DFT solution for manufacturing test • Low cost testers unable to keep up with the requirements of clocking schemes In this session, we want to explore the current offerings of the EDA tools to implement OCC based solutions and how the industry is going beyond those standard solutions to use innovative OCC based tests to provide a quality at-speed manufacturing test solution.
今天的典型设计是用DFT实现的,其中捕获时钟在芯片上提供。片上控制器(OCC)对测试的应用和质量起着至关重要的作用。几乎每个设计公司都开发了一种创新的方式,通过使用OCC和在芯片上实现的测试设计(DFT)来提供结构测试或内部结构功能测试组合。实现的复杂性来自于采用的各种测试策略:•过程变化导致诸如处理每个芯片上的非唯一关键路径之类的问题•测试数据压缩成为制造测试的主要DFT解决方案•低成本测试仪无法跟上时钟方案的要求我们希望探索EDA工具的现有产品,以实现基于OCC的解决方案,以及行业如何超越这些标准解决方案,使用创新的基于OCC的测试来提供高质量的高速制造测试解决方案。
{"title":"Special session 11B: Hot topic on-chip clocking — Industrial trends","authors":"A. Chandra","doi":"10.1109/VTS.2013.6548942","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548942","url":null,"abstract":"A typical design today is implemented with DFT where the capture clocks are supplied on chip. The on-chip controller (OCC) plays a critical role in the application and the quality of the tests. Almost every design house has developed an innovative way of delivering either the structural tests or in house mix of structural-functional tests through the use of OCC and the design-for-test (DFT) implemented on the chip. Complexities in the implementation come due to the various test strategies employed with: • Process variation leading to issues like dealing with non-unique critical paths on every chip • Test data compression becoming primary DFT solution for manufacturing test • Low cost testers unable to keep up with the requirements of clocking schemes In this session, we want to explore the current offerings of the EDA tools to implement OCC based solutions and how the industry is going beyond those standard solutions to use innovative OCC based tests to provide a quality at-speed manufacturing test solution.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130106576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contactless test access mechanism for TSV based 3D ICs 基于TSV的三维集成电路非接触式测试存取机制
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548904
R. Rashidzadeh
In this paper, three coupling techniques for contactless TSV probing have been presented and their advantages and disadvantages are discussed. A contactless, noninvasive TSV probing scheme based on the principle of capacitive coupling is designed and simulated. The implemented scheme supports the high-density and the tight-pitch requirements for TSV probing.
本文介绍了三种用于非接触式TSV探测的耦合技术,并讨论了它们的优缺点。设计并仿真了一种基于电容耦合原理的非接触式无创TSV探测方案。实现的方案支持TSV探测的高密度和小间距要求。
{"title":"Contactless test access mechanism for TSV based 3D ICs","authors":"R. Rashidzadeh","doi":"10.1109/VTS.2013.6548904","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548904","url":null,"abstract":"In this paper, three coupling techniques for contactless TSV probing have been presented and their advantages and disadvantages are discussed. A contactless, noninvasive TSV probing scheme based on the principle of capacitive coupling is designed and simulated. The implemented scheme supports the high-density and the tight-pitch requirements for TSV probing.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114092742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
An iterative diagnosis approach for ECC-based memory repair 基于ecc的记忆修复迭代诊断方法
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548928
P. Papavramidou, M. Nicolaidis
In modern SoCs embedded memories should be repaired to achieve acceptable yield. They should also be protected by ECC against field failures to achieve acceptable reliability. In technologies affected by high defect densities, conventional repair induce very high costs. To reduce them, we can use ECC to fix words comprising a single faulty cell and repair to fix all other faulty words. However it was shown that, for high defect densities, the diagnosis required for ECC-based repair may induce very large cost. In previous work this issue was fixed by means of new memory test algorithms that exhibit the so-called “single-read double-fault detection” property. As these algorithms are complex and increase test length, we explore a new iterative diagnosis approach, which provides tradeoffs in terms of hardware cost and test length.
在现代soc中,嵌入式存储器应该进行修复以达到可接受的成品率。它们还应该由ECC保护,防止现场故障,以达到可接受的可靠性。在受高缺陷密度影响的技术中,常规修复的成本非常高。为了减少错误,我们可以使用ECC来修复包含单个错误单元的单词,并修复所有其他错误单词。然而,研究表明,对于高缺陷密度,基于ecc的修复所需的诊断可能会产生非常大的成本。在以前的工作中,这个问题是通过新的内存测试算法解决的,该算法显示了所谓的“单读双故障检测”属性。由于这些算法复杂且增加了测试长度,我们探索了一种新的迭代诊断方法,该方法在硬件成本和测试长度方面提供了折衷。
{"title":"An iterative diagnosis approach for ECC-based memory repair","authors":"P. Papavramidou, M. Nicolaidis","doi":"10.1109/VTS.2013.6548928","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548928","url":null,"abstract":"In modern SoCs embedded memories should be repaired to achieve acceptable yield. They should also be protected by ECC against field failures to achieve acceptable reliability. In technologies affected by high defect densities, conventional repair induce very high costs. To reduce them, we can use ECC to fix words comprising a single faulty cell and repair to fix all other faulty words. However it was shown that, for high defect densities, the diagnosis required for ECC-based repair may induce very large cost. In previous work this issue was fixed by means of new memory test algorithms that exhibit the so-called “single-read double-fault detection” property. As these algorithms are complex and increase test length, we explore a new iterative diagnosis approach, which provides tradeoffs in terms of hardware cost and test length.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121516706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Hot topic session 4A: Reliability analysis of complex digital systems 热点议题4A:复杂数字系统的可靠性分析
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548898
A. Evans, M. Nicolaidis, R. Aitken, Burcin Aktan, Olivier Lauzeral
Today, there are several trends that are making the reliability analysis of complex integrated circuits an important challenge in industry. As transistor geometries shrink, the number of physical failure mechanisms is increasing while at the same time the number of transistors per chip is still growing. The rollout of new services is pushing compute demands both in handheld devices and in the data center which is driving up complexity and the level of integration. People are becoming critically dependent on mobile services and expect high availability. Looking forward to the deployment of the Internet of Things (IoT) where processors and routers will be embedded in billions of end-points, we are only going to see an increased demand for reliable computing. In this session, we bring together three different industrial perspectives on reliability. The first looks at the end-points, the second looks at the servers and the last looks at the economic drivers for reliability and the demand for new EDA tools for reliability analysis. In the first talk, Rob Aitken from ARM will discuss the reliability challenges in mobile applications. As mobile systems continue to increase in size and complexity, and user requirements are also becoming more stringent, it is important for designers of mobile systems to be aware of reliability issues, and to adapt their methodologies accordingly. This talk discusses the issues involved, from latent defects, through soft errors, aging and wearout, and shows how to consider these as part of the design process, how to quantify their effects, and how to mitigate them through design changes. In the second presentation, Burcin Aktan from Intel is going to discuss the evolution of the reliability features that are found in server applications. With so many processing units packed in data centers the reliability requirements on an individual device is growing, especially with integrated memory controllers and very high bandwidth data pathways. What was an “add-on” to a device function, 10–15 years ago, now needs to be considered carefully with stringent budgets distributed to each functional block that contribute to overall error rates. This talk will focus on the evolution of reliability features in a number of server products leading into the current state and look at how today's designers are dealing with the challenges of gathering requirements, translating these to design implementation and delivering quality features to customers. Finally we will close with remarks on future directions and possible research areas. In the final presentation, Olivier Lauzeral from iROC Technologies will discuss the importance of methodologies for the reliability analysis of complex SoCs. There is an inherent cost to adding reliability features in a complex IC and designers need to be able to make informed decisions about how much hardware to allocate for mitigation (redundancy, error correction, repair). A prerequisite to make such choices is
今天,有几个趋势使得复杂集成电路的可靠性分析成为工业中的一个重要挑战。随着晶体管几何形状的缩小,物理失效机制的数量在增加,同时每个芯片的晶体管数量仍在增长。新服务的推出推动了手持设备和数据中心的计算需求,从而提高了复杂性和集成水平。人们越来越依赖移动服务,并期望高可用性。展望物联网(IoT)的部署,处理器和路由器将嵌入数十亿个终端,我们只会看到对可靠计算的需求增加。在本次会议上,我们将介绍三种不同的工业可靠性观点。第一个着眼于终端,第二个着眼于服务器,最后一个着眼于可靠性的经济驱动因素以及对用于可靠性分析的新EDA工具的需求。在第一个演讲中,ARM的Rob Aitken将讨论移动应用中的可靠性挑战。随着移动系统的规模和复杂性不断增加,用户需求也变得越来越严格,对于移动系统的设计者来说,意识到可靠性问题并相应地调整他们的方法是很重要的。本次演讲讨论了所涉及的问题,从潜在缺陷,到软错误,老化和磨损,并展示了如何将这些问题视为设计过程的一部分,如何量化它们的影响,以及如何通过设计变更来减轻它们。在第二场演讲中,来自Intel的Burcin Aktan将讨论服务器应用程序中可靠性特性的演变。由于数据中心中有如此多的处理单元,对单个设备的可靠性要求越来越高,特别是集成内存控制器和非常高带宽的数据路径。10-15年前,什么是设备功能的“附加组件”,现在需要仔细考虑,并将严格的预算分配给导致整体错误率的每个功能块。本次演讲将重点讨论许多服务器产品的可靠性特性的演变,并探讨当今的设计人员如何应对收集需求的挑战,将这些需求转化为设计实现,并向客户交付高质量的特性。最后,我们将对未来的发展方向和可能的研究领域进行总结。在最后的演讲中,来自iROC Technologies的Olivier Lauzeral将讨论复杂soc可靠性分析方法的重要性。在复杂的集成电路中添加可靠性特性存在固有的成本,设计人员需要能够做出明智的决策,决定分配多少硬件用于缓解(冗余、纠错、修复)。做出这种选择的先决条件是明确界定目标,这需要一个经济框架,在这个框架中,失败的成本是可以理解的。一旦建立了系统和单个设备的可靠性目标,就需要EDA工具,使设计人员能够计算设备内的故障率和故障模式。该分析必须包括所有失效机制(辐射效应、寿命效应、制造检测),并考虑到故障和观察到的错误之间的相关降级。这种新的EDA基础设施是设计人员进行有效权衡以达到成本效益设计的关键。
{"title":"Hot topic session 4A: Reliability analysis of complex digital systems","authors":"A. Evans, M. Nicolaidis, R. Aitken, Burcin Aktan, Olivier Lauzeral","doi":"10.1109/VTS.2013.6548898","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548898","url":null,"abstract":"Today, there are several trends that are making the reliability analysis of complex integrated circuits an important challenge in industry. As transistor geometries shrink, the number of physical failure mechanisms is increasing while at the same time the number of transistors per chip is still growing. The rollout of new services is pushing compute demands both in handheld devices and in the data center which is driving up complexity and the level of integration. People are becoming critically dependent on mobile services and expect high availability. Looking forward to the deployment of the Internet of Things (IoT) where processors and routers will be embedded in billions of end-points, we are only going to see an increased demand for reliable computing. In this session, we bring together three different industrial perspectives on reliability. The first looks at the end-points, the second looks at the servers and the last looks at the economic drivers for reliability and the demand for new EDA tools for reliability analysis. In the first talk, Rob Aitken from ARM will discuss the reliability challenges in mobile applications. As mobile systems continue to increase in size and complexity, and user requirements are also becoming more stringent, it is important for designers of mobile systems to be aware of reliability issues, and to adapt their methodologies accordingly. This talk discusses the issues involved, from latent defects, through soft errors, aging and wearout, and shows how to consider these as part of the design process, how to quantify their effects, and how to mitigate them through design changes. In the second presentation, Burcin Aktan from Intel is going to discuss the evolution of the reliability features that are found in server applications. With so many processing units packed in data centers the reliability requirements on an individual device is growing, especially with integrated memory controllers and very high bandwidth data pathways. What was an “add-on” to a device function, 10–15 years ago, now needs to be considered carefully with stringent budgets distributed to each functional block that contribute to overall error rates. This talk will focus on the evolution of reliability features in a number of server products leading into the current state and look at how today's designers are dealing with the challenges of gathering requirements, translating these to design implementation and delivering quality features to customers. Finally we will close with remarks on future directions and possible research areas. In the final presentation, Olivier Lauzeral from iROC Technologies will discuss the importance of methodologies for the reliability analysis of complex SoCs. There is an inherent cost to adding reliability features in a complex IC and designers need to be able to make informed decisions about how much hardware to allocate for mitigation (redundancy, error correction, repair). A prerequisite to make such choices is","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":" 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113950551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selection of tests for outlier detection 选择异常值检测的测试
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548885
H. Bossers, J. Hurink, G. Smit
Integrated circuits are tested thoroughly in order to meet the high demands on quality. As an additional step, outlier detection is used to detect potential unreliable chips such that quality can be improved further. However, it is often unclear to which tests outlier detection should be applied and how the parameters must be set, such that outliers are detected and yield loss remains limited. In this paper we introduce a mathematical framework, that given a set of target devices, can select tests for outlier detection and set the parameters for each outlier detection method. We provide results on real world data and analyze the resulting yield loss and missed targets.
为了满足高质量的要求,对集成电路进行了彻底的测试。作为附加步骤,使用异常值检测来检测潜在的不可靠芯片,从而进一步提高质量。然而,通常不清楚应该对哪些测试应用异常值检测以及必须如何设置参数,以便检测到异常值并限制产量损失。本文介绍了一种数学框架,即给定一组目标设备,可以选择异常点检测的测试方法,并设置每种异常点检测方法的参数。我们提供真实世界数据的结果,并分析由此产生的产量损失和未达到的目标。
{"title":"Selection of tests for outlier detection","authors":"H. Bossers, J. Hurink, G. Smit","doi":"10.1109/VTS.2013.6548885","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548885","url":null,"abstract":"Integrated circuits are tested thoroughly in order to meet the high demands on quality. As an additional step, outlier detection is used to detect potential unreliable chips such that quality can be improved further. However, it is often unclear to which tests outlier detection should be applied and how the parameters must be set, such that outliers are detected and yield loss remains limited. In this paper we introduce a mathematical framework, that given a set of target devices, can select tests for outlier detection and set the parameters for each outlier detection method. We provide results on real world data and analyze the resulting yield loss and missed targets.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133770196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Novel estimation method of EVM with channel correction for linear impairments in multi-standard RF transceivers 基于信道校正的多标准射频收发器线性损伤EVM估计新方法
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548890
Koji Asami, T. Shimura, Toshiaki Kurihara
Since recent wireless communication devices support multiple communication standards on a single chip, Error Vector Magnitudes (EVMs) for multiple standards are measured to evaluate the devices. The EVM is defined by the particular calculation methods of the communication standards, especially channel correction methods. Therefore the EVM value is different between standards, even if the modulation methods are identical. This paper describes an EVM evaluation method for multi-standard devices, performing channel correction particular to each standard. The EVM for the various standards can be calculated by a unique algorithm, which uses the values of the frequency-dependent I/Q imbalances and the Signal-to-Noise Ratio (SNR) calculated from a single measurement data. The validity of this technique is confirmed using an actual WiMAX transceiver on an ATE.
由于目前的无线通信设备在单芯片上支持多种通信标准,因此需要测量多种标准的误差矢量幅度(evm)来评估设备。EVM是由通信标准的特定计算方法定义的,特别是信道校正方法。因此,即使调制方法相同,标准之间的EVM值也不同。本文介绍了一种多标准器件的EVM评价方法,对每个标准进行信道校正。各种标准的EVM可以通过一种独特的算法计算,该算法使用频率相关的I/Q不平衡值和从单个测量数据计算的信噪比(SNR)。该技术的有效性通过一个实际的WiMAX收发器在ATE上得到了验证。
{"title":"Novel estimation method of EVM with channel correction for linear impairments in multi-standard RF transceivers","authors":"Koji Asami, T. Shimura, Toshiaki Kurihara","doi":"10.1109/VTS.2013.6548890","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548890","url":null,"abstract":"Since recent wireless communication devices support multiple communication standards on a single chip, Error Vector Magnitudes (EVMs) for multiple standards are measured to evaluate the devices. The EVM is defined by the particular calculation methods of the communication standards, especially channel correction methods. Therefore the EVM value is different between standards, even if the modulation methods are identical. This paper describes an EVM evaluation method for multi-standard devices, performing channel correction particular to each standard. The EVM for the various standards can be calculated by a unique algorithm, which uses the values of the frequency-dependent I/Q imbalances and the Signal-to-Noise Ratio (SNR) calculated from a single measurement data. The validity of this technique is confirmed using an actual WiMAX transceiver on an ATE.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115102917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D-IC interconnect test, diagnosis, and repair 3D-IC互连测试,诊断和维修
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548905
Chun-Chuan Chi, Cheng-Wen Wu, Min-Jer Wang, Hung-Chih Lin
Through-Silicon-Via (TSV)-based three-dimensional ICs (3D-ICs) have gained increasing attention due to their potential in reducing manufacturing costs and capability of integrating more functionality into a single chip. One of the most important factors that affect 3D-IC yield is the integrity of interconnects which connect different dies in a 3D-IC. This paper proposes a Design-for-Test (DIT) scheme that can 1) detect faulty interconnects in 3D-ICs, 2) pinpoint open defect locations to help yield learning, and 3) repair faulty interconnects caused by open defects to improve the 3D-IC yield. Experimental results show that the proposed scheme can achieve a diagnosis resolution of 84% for open defects. With the interconnect repair mechanism, the 3D-IC yield is improved by 10%. In addition, cost-benefit analysis reveals that the proposed technique can significantly increase the net profit, especially when the natural interconnect yield is low.
基于通硅孔(TSV)的三维集成电路(3d - ic)由于其在降低制造成本和将更多功能集成到单个芯片上的潜力而受到越来越多的关注。影响3D-IC成品率的最重要因素之一是连接3D-IC中不同芯片的互连的完整性。本文提出了一种设计测试(Design-for-Test, DIT)方案,该方案可以1)检测3D-IC中的故障互连,2)精确定位开放缺陷位置以帮助良率学习,3)修复由开放缺陷引起的故障互连以提高3D-IC良率。实验结果表明,该方法对开放性缺陷的诊断准确率可达84%。采用互连修复机制,3D-IC的成品率提高了10%。此外,成本效益分析表明,该技术可以显著提高净利润,特别是在自然互连成品率较低的情况下。
{"title":"3D-IC interconnect test, diagnosis, and repair","authors":"Chun-Chuan Chi, Cheng-Wen Wu, Min-Jer Wang, Hung-Chih Lin","doi":"10.1109/VTS.2013.6548905","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548905","url":null,"abstract":"Through-Silicon-Via (TSV)-based three-dimensional ICs (3D-ICs) have gained increasing attention due to their potential in reducing manufacturing costs and capability of integrating more functionality into a single chip. One of the most important factors that affect 3D-IC yield is the integrity of interconnects which connect different dies in a 3D-IC. This paper proposes a Design-for-Test (DIT) scheme that can 1) detect faulty interconnects in 3D-ICs, 2) pinpoint open defect locations to help yield learning, and 3) repair faulty interconnects caused by open defects to improve the 3D-IC yield. Experimental results show that the proposed scheme can achieve a diagnosis resolution of 84% for open defects. With the interconnect repair mechanism, the 3D-IC yield is improved by 10%. In addition, cost-benefit analysis reveals that the proposed technique can significantly increase the net profit, especially when the natural interconnect yield is low.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125798742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Special session 12C: Town-hall meeting “young professionals in test” 特别会议12C:市政厅会议“考试中的年轻专业人员”
Pub Date : 2013-04-29 DOI: 10.1109/VTS.2013.6548946
A. Sanyal, Y. Zorian
IEEE Test Technology Technical Council (TTTC) takes an initiative to establish a forum involving young professionals working in the broad domain of test, diagnosis, yield improvement and related areas. We have formed a panel involving a diversified group of young professionals (recent PhD graduates from US and Canadian universities) currently employed in the leading US semiconductor and EDA companies. The session will be held in town-hall format, organized by Dr. Alodeep Sanyal from Synopsys and Dr. Yanjing Lin from Intel, and moderated by Dr. Yervant Zorian from Synopsys. The panelists will be involved in discussing the objectives of this newly-formed TTTC forum and the activities it should monitor. Some of the topics of discussion may include: (a) The benefits that TTTC can offer to the young professionals; (b) Establishing a connection between working professionals and graduate students that may provide research/mentoring opportunities for the professionals; (c) An actively maintained job requisition database exclusively available under TTTC for the student members to help them apply for a suitable job. The overall topic of discussion for this panel has been left quite open-ended for participants to propose their own ideas. We expect this panel will identify the future direction and activities for the TTTC Young Professionals Forum.
IEEE测试技术委员会(TTTC)主动建立了一个论坛,包括在测试、诊断、良率改进和相关领域工作的年轻专业人士。我们已经成立了一个小组,其中包括一群多元化的年轻专业人士(最近从美国和加拿大大学毕业的博士),他们目前在美国领先的半导体和EDA公司工作。会议将以会议形式举行,由新思科技的Alodeep Sanyal博士和英特尔的林燕静博士组织,新思科技的Yervant Zorian博士主持。小组成员将参与讨论这个新成立的TTTC论坛的目标及其应监测的活动。讨论的一些题目可能包括:(a) TTTC可以为年轻专业人员提供的好处;(b)在工作的专业人员和研究生之间建立联系,为专业人员提供研究/指导机会;(c)积极维护一个专为学生会员提供的工作申请数据库,以帮助他们申请合适的工作。本次小组讨论的总体主题是开放式的,参与者可以提出自己的想法。我们期望这个小组将确定TTTC青年专业人士论坛的未来方向和活动。
{"title":"Special session 12C: Town-hall meeting “young professionals in test”","authors":"A. Sanyal, Y. Zorian","doi":"10.1109/VTS.2013.6548946","DOIUrl":"https://doi.org/10.1109/VTS.2013.6548946","url":null,"abstract":"IEEE Test Technology Technical Council (TTTC) takes an initiative to establish a forum involving young professionals working in the broad domain of test, diagnosis, yield improvement and related areas. We have formed a panel involving a diversified group of young professionals (recent PhD graduates from US and Canadian universities) currently employed in the leading US semiconductor and EDA companies. The session will be held in town-hall format, organized by Dr. Alodeep Sanyal from Synopsys and Dr. Yanjing Lin from Intel, and moderated by Dr. Yervant Zorian from Synopsys. The panelists will be involved in discussing the objectives of this newly-formed TTTC forum and the activities it should monitor. Some of the topics of discussion may include: (a) The benefits that TTTC can offer to the young professionals; (b) Establishing a connection between working professionals and graduate students that may provide research/mentoring opportunities for the professionals; (c) An actively maintained job requisition database exclusively available under TTTC for the student members to help them apply for a suitable job. The overall topic of discussion for this panel has been left quite open-ended for participants to propose their own ideas. We expect this panel will identify the future direction and activities for the TTTC Young Professionals Forum.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129732984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2013 IEEE 31st VLSI Test Symposium (VTS)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1