A novel design of super-capcitor based on black silicon with atomic layer deposition

Abstract

In this paper, a novel super-capacitor design based on the black silicon was introduced. The atomic layer deposition was designed to fabricate the dielectric and electrode layer. And the black silicon was chosen for the substrate. A specific MEMS process was also designed to achieve the contact between the metal electrode and electrode layer. The parallel-plate capacitor theory was employed for the capacitance calculation. And the simulation has showed that this novel super-capacitor design has big capacitance and quick charge/discharge speed.