Gang Cao, Chaojun Liu, Xiaogang Liu, Xuefang Wang, Sheng Liu
{"title":"Resistance electric filed dependence simulation of piezoresistive silicon pressure sensor and improvement by shield layer","authors":"Gang Cao, Chaojun Liu, Xiaogang Liu, Xuefang Wang, Sheng Liu","doi":"10.1109/EUROSIME.2013.6529926","DOIUrl":null,"url":null,"abstract":"This paper models two structures for simulating the resistance electric field dependence of piezoresistor in silicon pressure sensor. The difference of the two structures is one with a shield layer and the other one without it. The simulation results show that the shield layer can shield the electric field no matter where it origins externally or it is caused by fixed oxide charges, which is very useful to improve the stability of the piezoresistor.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2013.6529926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper models two structures for simulating the resistance electric field dependence of piezoresistor in silicon pressure sensor. The difference of the two structures is one with a shield layer and the other one without it. The simulation results show that the shield layer can shield the electric field no matter where it origins externally or it is caused by fixed oxide charges, which is very useful to improve the stability of the piezoresistor.
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