Kwanhim Lam, H. Ding, Xuefeng Liu, B. Orner, J. Rascoe, B. Dewitt, E. Mina, B. Gaucher
{"title":"Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology","authors":"Kwanhim Lam, H. Ding, Xuefeng Liu, B. Orner, J. Rascoe, B. Dewitt, E. Mina, B. Gaucher","doi":"10.1109/EMICC.2007.4412659","DOIUrl":null,"url":null,"abstract":"Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM .13 mum SiGe technology is demonstrated. A SPDT reflective switch targeting 60 GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12 dB return loss and 25 to 35 dB of isolation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM .13 mum SiGe technology is demonstrated. A SPDT reflective switch targeting 60 GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12 dB return loss and 25 to 35 dB of isolation.