V. Grimalsky, J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. Koshevaya
{"title":"Non-linear interaction of space charge waves in GaAs semiconductor","authors":"V. Grimalsky, J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. Koshevaya","doi":"10.1109/MIEL.2002.1003203","DOIUrl":null,"url":null,"abstract":"This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E/sub crit/, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E/spl ges/E/sub crit/. Under these conditions, the electron velocity is a function of the electric field given by E=E/sub 0/+E/spl tilde/, where E/sub o/ is the constant part and E/spl tilde/ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E/sub crit/, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E/spl ges/E/sub crit/. Under these conditions, the electron velocity is a function of the electric field given by E=E/sub 0/+E/spl tilde/, where E/sub o/ is the constant part and E/spl tilde/ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.