Memory card address bus design

D.A. Gernhart, C. Chang, Kesse Ho
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引用次数: 1

Abstract

The interaction of signal line impedance, crosstalk, chip capacitive loading and driver circuit output impedance on the operation of a memory address bus is demonstrated. The ASTAP circuit simulation program is used for detailed studies. The results of three parallel address lines connected to memory chips for unterminated far ends are discussed. Signal-line impedance decreases when adjacent lines are introduced. Choosing the correct driver circuit output impedance and terminating resistance affects the signal-line voltage and switching. The memory chips add capacitive loading to the line, which also reduces the impedance and affects the delay of the line. Simultaneous switching of the address lines adds delay to the system as well. Some design parameters based upon these interactions are discussed.<>
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存储卡地址总线设计
讨论了信号线阻抗、串扰、芯片电容负载和驱动电路输出阻抗对存储器地址总线工作的影响。采用ASTAP电路仿真程序进行详细研究。讨论了连接到存储芯片的三个并行地址线的结果,用于未终止的远端。当引入相邻线时,信号线阻抗减小。选择正确的驱动电路输出阻抗和终端电阻影响信号线电压和开关。存储芯片为线路增加了容性负载,这也降低了阻抗,影响了线路的延迟。地址线的同时交换也增加了系统的延迟。讨论了基于这些相互作用的一些设计参数。
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