{"title":"Rugged AlGaAs P-I-N diode switches: High power RF & mmW all-shunt and series-shunt architectures","authors":"J. Brogle, A. Rozbicki, T. Boles","doi":"10.23919/EUMIC.2017.8230672","DOIUrl":null,"url":null,"abstract":"GaAs P-I-N diodes with AlGaAs layers have been invented and developed at MACOM since 2003. Addition of AlGaAs layers as the anode and/or cathode resulted in heterojunction diodes with reduced forward-biased high frequency resistance together with no change to reverse-biased capacitance. Improved electrical and thermal performance of GaAs P-I-N diode monolithic integrated circuits such as switches has been demonstrated by including such AlGaAs layers. This paper describes further performance improvements of AlGaAs integrated P-I-N diode switches with advanced electromagnetic (EM) and thermal modelling techniques, resulting in continuous-wave power reliability of series-shunt designs in excess of 10W and all-shunt designs in excess of 40W, at X-Band and Ka-Band respectively.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
GaAs P-I-N diodes with AlGaAs layers have been invented and developed at MACOM since 2003. Addition of AlGaAs layers as the anode and/or cathode resulted in heterojunction diodes with reduced forward-biased high frequency resistance together with no change to reverse-biased capacitance. Improved electrical and thermal performance of GaAs P-I-N diode monolithic integrated circuits such as switches has been demonstrated by including such AlGaAs layers. This paper describes further performance improvements of AlGaAs integrated P-I-N diode switches with advanced electromagnetic (EM) and thermal modelling techniques, resulting in continuous-wave power reliability of series-shunt designs in excess of 10W and all-shunt designs in excess of 40W, at X-Band and Ka-Band respectively.
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