H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li
{"title":"Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches","authors":"H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li","doi":"10.1109/IWJT.2004.1306836","DOIUrl":null,"url":null,"abstract":"The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.
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