{"title":"USJ formation & characterization for 65nm node and beyond","authors":"J. Borland","doi":"10.1109/IWJT.2004.1306746","DOIUrl":null,"url":null,"abstract":"Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.
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