Pub Date : 2004-03-16DOI: 10.1109/IWJT.2004.1306746
J. Borland
Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.
{"title":"USJ formation & characterization for 65nm node and beyond","authors":"J. Borland","doi":"10.1109/IWJT.2004.1306746","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306746","url":null,"abstract":"Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116928049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-16DOI: 10.1109/IWJT.2004.1306770
S. Tavakoli, Kyoung-Eon Lee, S. Baek, H. Hwang
Low-resistive n+/p and p+/n junctions were investigated using antimony and gallium conventional ion-implantation and low temperature rapid thermal annealing to be implemented in high-rmetal-electrode gate stack MOSFETs. Both dopant species completely regrew through solid phasevepitaxial regrowth (SPER) with low thermal budget and acceptable annealing time (at 600°C for 1 min). SPER resulted in highly activated junctions and acceptable leakage current without significant change in junction depth compared to as-implanted profile. The results indicated that Sb and Ga are proper candidates for shallow and low resistive source and drain extensions fabricated at low temperature for high-rMOSFET processing era.
{"title":"Low temperature activated Ga and Sb ion-implanted shallow junctions","authors":"S. Tavakoli, Kyoung-Eon Lee, S. Baek, H. Hwang","doi":"10.1109/IWJT.2004.1306770","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306770","url":null,"abstract":"Low-resistive n+/p and p+/n junctions were investigated using antimony and gallium conventional ion-implantation and low temperature rapid thermal annealing to be implemented in high-rmetal-electrode gate stack MOSFETs. Both dopant species completely regrew through solid phasevepitaxial regrowth (SPER) with low thermal budget and acceptable annealing time (at 600°C for 1 min). SPER resulted in highly activated junctions and acceptable leakage current without significant change in junction depth compared to as-implanted profile. The results indicated that Sb and Ga are proper candidates for shallow and low resistive source and drain extensions fabricated at low temperature for high-rMOSFET processing era.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126442739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306873
Hao Shi, Xiaokang Shi, Min Yu, Ru Huang, Xing Zhang, Yangyuan Wang, K. Suzuki, H. Oka
Traditional Monte Carlo ion implantation simulator TSUPREM4 is used to investigate ion implantation into HfO/sub 2/, but cannot get satisfactory results. In this paper, an atomic simulator named LEACS is developed using molecular dynamics method. By virtue of considering the basic physical interactions more precisely and with only one fitting parameter r/sub s//sup 0/ named one electron radius used in the atomic simulator, it is found that LEACS rather than TSUPREM4 has a better precision in simulating ion implantations into HfO/sub 2/. B, As and P implantations into HfO/sub 2/ material in the energy range of ReV to 40 keV are simulated using LEACS. Very high accuracy is achieved in our simulation, which proves that molecular dynamics method is successfully implemented in our atomic simulator and the molecular dynamics method shows greater advantage than Monte Carlo method in TSUPREM4.
{"title":"Atomic simulation of ion implantation into HfO/sub 2/: LEACS vs. TSUPREM4","authors":"Hao Shi, Xiaokang Shi, Min Yu, Ru Huang, Xing Zhang, Yangyuan Wang, K. Suzuki, H. Oka","doi":"10.1109/IWJT.2004.1306873","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306873","url":null,"abstract":"Traditional Monte Carlo ion implantation simulator TSUPREM4 is used to investigate ion implantation into HfO/sub 2/, but cannot get satisfactory results. In this paper, an atomic simulator named LEACS is developed using molecular dynamics method. By virtue of considering the basic physical interactions more precisely and with only one fitting parameter r/sub s//sup 0/ named one electron radius used in the atomic simulator, it is found that LEACS rather than TSUPREM4 has a better precision in simulating ion implantations into HfO/sub 2/. B, As and P implantations into HfO/sub 2/ material in the energy range of ReV to 40 keV are simulated using LEACS. Very high accuracy is achieved in our simulation, which proves that molecular dynamics method is successfully implemented in our atomic simulator and the molecular dynamics method shows greater advantage than Monte Carlo method in TSUPREM4.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127154893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306786
Yimen Zhang, Yuming Zhang, YueHu Wang, R. Liang
A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.
{"title":"The effect of different mechanism on the characteristics of SiC Schottky barrier diode","authors":"Yimen Zhang, Yuming Zhang, YueHu Wang, R. Liang","doi":"10.1109/IWJT.2004.1306786","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306786","url":null,"abstract":"A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123399904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306783
Z. Hao, Wang Yan
In this paper we present the research of forming CoSi/sub 2//Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3/spl times/10/sup 17/ion/cm/sup 2/ Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850/spl deg/C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.
{"title":"CoSi/sub 2//Si Schottky junction formed by high flux metal ion implantation","authors":"Z. Hao, Wang Yan","doi":"10.1109/IWJT.2004.1306783","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306783","url":null,"abstract":"In this paper we present the research of forming CoSi/sub 2//Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3/spl times/10/sup 17/ion/cm/sup 2/ Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850/spl deg/C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125273230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306796
Shu‐Jenn Yu, W. Hsu, Yih-Juan Li, Yeong-Jia Chen
In order to enhance the electron mobility we use step graded channel structure in the heterostructure field effect transistor to reduce Coulomb scattering. The electrons are far away from the AlGaAs/InGaAs interface. We fabricated successfully and obtained high drain current density and large gate voltage swing. For a 1.2/spl times/100 /spl mu/m/sup 2/ gate dimension, the maximum saturation drain current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm along with the gate voltage swing of 1.9V. Additionally, we use four period AlGaAs/GaAs buffer layer so that the variations of threshold voltages are insensitive to temperature.
{"title":"Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing","authors":"Shu‐Jenn Yu, W. Hsu, Yih-Juan Li, Yeong-Jia Chen","doi":"10.1109/IWJT.2004.1306796","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306796","url":null,"abstract":"In order to enhance the electron mobility we use step graded channel structure in the heterostructure field effect transistor to reduce Coulomb scattering. The electrons are far away from the AlGaAs/InGaAs interface. We fabricated successfully and obtained high drain current density and large gate voltage swing. For a 1.2/spl times/100 /spl mu/m/sup 2/ gate dimension, the maximum saturation drain current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm along with the gate voltage swing of 1.9V. Additionally, we use four period AlGaAs/GaAs buffer layer so that the variations of threshold voltages are insensitive to temperature.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126834054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306760
P. Chen, Z. An, R. Fu, W. Liu, M. Zhu, C. Lin, P. Chu
Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1/spl times/10/sup 14/ cm/sup -2/ at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1/spl times/10/sup 14/ cm/sup -2/), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer.
{"title":"Implant damage and diffusion behavior of indium in silicon-on-insulator","authors":"P. Chen, Z. An, R. Fu, W. Liu, M. Zhu, C. Lin, P. Chu","doi":"10.1109/IWJT.2004.1306760","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306760","url":null,"abstract":"Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1/spl times/10/sup 14/ cm/sup -2/ at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1/spl times/10/sup 14/ cm/sup -2/), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114890382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306781
R. Ma, Charge Huang, Xiang Wang, H. Yao, Jin Wu, Shaohua Liu, Ruijing Han
Metal bridging was identified as the root cause for yield degradation for the wafers that were processed through metal litho rework operations. The metal film contains TiN/Al(0.5%Cu)/TiN/SiON/SiO/sub 2/ stack with designed thickness at each associated layer. The objective of this study was to investigate and understand the formation of metal bridging and define new operation conditions to improve yield for reworked wafers. DOE was carried out on short loop (SL) wafers to identify key modulators in the rework loop. Plausible mechanism was proposed as CuAl/sub 2/ precipitation along the grain boundary (GB) and as a result local masking to leave etch residues at interconnect interface. Scanning electron microscope (SEM) and focused ion beam (FIB) were used to locate and review etch residues after plasma etch. In-line Etest data indicated that ashing temperature was the key modulator for metal bridging. Top-view images and cross-section micrographs showed that the bridging/etch residues appeared at the bottom between metal space lines. Yield was recovered to match non-rework wafers under new rework operation conditions.
{"title":"Influence of rework ashing temperature on the phase segregation and CuAl/sub 2/ precipitation in Al(Cu) metal line stacks","authors":"R. Ma, Charge Huang, Xiang Wang, H. Yao, Jin Wu, Shaohua Liu, Ruijing Han","doi":"10.1109/IWJT.2004.1306781","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306781","url":null,"abstract":"Metal bridging was identified as the root cause for yield degradation for the wafers that were processed through metal litho rework operations. The metal film contains TiN/Al(0.5%Cu)/TiN/SiON/SiO/sub 2/ stack with designed thickness at each associated layer. The objective of this study was to investigate and understand the formation of metal bridging and define new operation conditions to improve yield for reworked wafers. DOE was carried out on short loop (SL) wafers to identify key modulators in the rework loop. Plausible mechanism was proposed as CuAl/sub 2/ precipitation along the grain boundary (GB) and as a result local masking to leave etch residues at interconnect interface. Scanning electron microscope (SEM) and focused ion beam (FIB) were used to locate and review etch residues after plasma etch. In-line Etest data indicated that ashing temperature was the key modulator for metal bridging. Top-view images and cross-section micrographs showed that the bridging/etch residues appeared at the bottom between metal space lines. Yield was recovered to match non-rework wafers under new rework operation conditions.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128432147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306793
N. Tang, B. Shen, Chunmin Tao, Dunjun Chen, Y. Gui, C. Jiang, Z. Qiu, Rong Zhang, Youdou Zheng, S. Gu, J. Chu
Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.
{"title":"Magnetointersubband scattering oscillations of two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures","authors":"N. Tang, B. Shen, Chunmin Tao, Dunjun Chen, Y. Gui, C. Jiang, Z. Qiu, Rong Zhang, Youdou Zheng, S. Gu, J. Chu","doi":"10.1109/IWJT.2004.1306793","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306793","url":null,"abstract":"Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126897362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306768
R. Hillard, J. Borland, C. Win Ye
An accurate method to measure the four point probe (4pp) sheet resistance (R/sub S/) of USJ Source-Drain structures is described. The new method utilizes Elastic Material gate (EM-gate) probes to form non-penetrating contacts to the silicon surface. The probe design is kinematic and the force controlled to ensure elastic deformation of the probe material. The probe material is selected so that large direct tunneling (DT) currents can flow through the native oxide thereby forming a low impedance contact. In this paper, the new 4pp will be demonstrated on a variety of implanted USJ structures.
{"title":"Accurate determination of ultra-shallow junction sheet resistance with a non-penetrating four point probe","authors":"R. Hillard, J. Borland, C. Win Ye","doi":"10.1109/IWJT.2004.1306768","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306768","url":null,"abstract":"An accurate method to measure the four point probe (4pp) sheet resistance (R/sub S/) of USJ Source-Drain structures is described. The new method utilizes Elastic Material gate (EM-gate) probes to form non-penetrating contacts to the silicon surface. The probe design is kinematic and the force controlled to ensure elastic deformation of the probe material. The probe material is selected so that large direct tunneling (DT) currents can flow through the native oxide thereby forming a low impedance contact. In this paper, the new 4pp will be demonstrated on a variety of implanted USJ structures.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"62 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113978411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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