{"title":"Collaborative innovation for future mobile applications","authors":"R. Nair","doi":"10.1109/ASSCC.2013.6690970","DOIUrl":null,"url":null,"abstract":"Advanced mobile applications are the predominant driver for semiconductor technology innovations both at the leading edge and at the mature nodes. The short life-cycles of mobile products and the need for SoC level differentiation imposes significant challenges on technology architecture and time-to-volume. We foresee a move towards much closer collaboration, in fact a virtual IDM-like model, on both technical and business levels. With daunting technical challenges like 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, extreme ultraviolet (EUV) lithography, collaboration - early, often and deep - is really the only practical approach given the cost and complexities involved. Early eco-system enablement with accurate models and silicon proven IP ensures first pass design success, which is an important step for faster Time-to-volume (TTV). We refer to this close collaborative model as Foundry 2.0.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6690970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Advanced mobile applications are the predominant driver for semiconductor technology innovations both at the leading edge and at the mature nodes. The short life-cycles of mobile products and the need for SoC level differentiation imposes significant challenges on technology architecture and time-to-volume. We foresee a move towards much closer collaboration, in fact a virtual IDM-like model, on both technical and business levels. With daunting technical challenges like 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, extreme ultraviolet (EUV) lithography, collaboration - early, often and deep - is really the only practical approach given the cost and complexities involved. Early eco-system enablement with accurate models and silicon proven IP ensures first pass design success, which is an important step for faster Time-to-volume (TTV). We refer to this close collaborative model as Foundry 2.0.