V. Narasimhan, N. Yastrebova, C. Valdivia, T. Hall, K. Hinzer, D. Masson, S. Fafard, A. Jaouad, R. Arès, V. Aimez
{"title":"Effect of parameter variations on the current-voltage behavior of AlGaAs tunnel junction models","authors":"V. Narasimhan, N. Yastrebova, C. Valdivia, T. Hall, K. Hinzer, D. Masson, S. Fafard, A. Jaouad, R. Arès, V. Aimez","doi":"10.1109/MNRC.2008.4683404","DOIUrl":null,"url":null,"abstract":"To optimize the design of multi-junction photovoltaic devices, robust models of the tunnel junctions connecting sub-cells are essential. In this paper, we describe the effects of varying key parameters in a model of an AlGaAs tunnel junction. We noted two peaks in the current-voltage behavior of the AlGaAs tunnel junction under consideration. We found that the effective Richardson constant scaling factors in the model primarily affected the magnitude of the main peak. The p++ doping concentration impacted the height of both peaks, while the n++ doping concentration changed the magnitude of the main peak and shifted the secondary peak.","PeriodicalId":247684,"journal":{"name":"2008 1st Microsystems and Nanoelectronics Research Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 1st Microsystems and Nanoelectronics Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MNRC.2008.4683404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
To optimize the design of multi-junction photovoltaic devices, robust models of the tunnel junctions connecting sub-cells are essential. In this paper, we describe the effects of varying key parameters in a model of an AlGaAs tunnel junction. We noted two peaks in the current-voltage behavior of the AlGaAs tunnel junction under consideration. We found that the effective Richardson constant scaling factors in the model primarily affected the magnitude of the main peak. The p++ doping concentration impacted the height of both peaks, while the n++ doping concentration changed the magnitude of the main peak and shifted the secondary peak.