Radiated emission of a bent microstrip line using hertzian dipole method

Y. S. Khee, M. Jenu
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引用次数: 1

Abstract

Electromagnetic Interference (EMI) and signal integrity (SI) issues have generated challenges to the high speed digital circuit designer as the operating clock frequency of the system continue to increase to accommodate broadband applications. Discontinuity due to microstrip bents which appear frequently in most VLSI design requires thorough understanding on the current distribution in order to generate the immunity and emission characteristic of the circuit. This paper is on estimating the radiated emission on both the straight and bent microstrip line using the expanded hertzian dipole approach which will be validated with computer simulation results. It is found that the expanded hertzian dipole approach which is initially applied on wire can predict the emission on microstrip line well when proper adjustment is made.
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用赫兹偶极子法研究弯曲微带线的辐射发射
随着系统的工作时钟频率不断增加以适应宽带应用,电磁干扰(EMI)和信号完整性(SI)问题给高速数字电路设计者带来了挑战。在大多数VLSI设计中经常出现的由微带弯曲引起的不连续需要对电流分布有透彻的了解,以便产生电路的抗扰度和发射特性。本文用扩展赫兹偶极子法估计了直微带线和弯微带线的辐射发射,并用计算机仿真结果进行了验证。研究发现,最初应用于微带线的扩展赫兹偶极子方法,在适当调整的情况下,可以很好地预测微带线上的发射。
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