{"title":"Leak current characterization in high frequency operation of CMOS circuits fabricated on SOI substrate","authors":"H. Ito, K. Asada","doi":"10.1109/ICMTS.1995.513947","DOIUrl":null,"url":null,"abstract":"Threshold voltage shift in high frequency operation of CMOS/SOI is experimentally studied, using supply current measurement of inverter chains as test structures. For a large supply voltage the electron-hole generation current becomes dominant, resulting in a lower threshold voltage, while the threshold voltage becomes higher than the DC case for a low supply voltage. This method will be useful as a measure of \"substrate current\" for floating body CMOS/SOI.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Threshold voltage shift in high frequency operation of CMOS/SOI is experimentally studied, using supply current measurement of inverter chains as test structures. For a large supply voltage the electron-hole generation current becomes dominant, resulting in a lower threshold voltage, while the threshold voltage becomes higher than the DC case for a low supply voltage. This method will be useful as a measure of "substrate current" for floating body CMOS/SOI.
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