The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process

M. C. Wilson, D. Gold, P. Hunt, G. Booker
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引用次数: 5

Abstract

The 2D equi-concentration dopant contours are revealed for the first time for a cross-section through a 1 mu m double-layer polysilicon bipolar device. The planarity of the emitter junction is shown to be dependent on the presence of emitter sidewall spacer filters. Implications for ultrashallow junction devices are presented.<>
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双层多晶硅双极工艺中发射极侧壁隔离对发射极结的影响
首次揭示了1 μ m双层多晶硅双极器件横截面的二维等浓度掺杂物轮廓。发射极结的平面度取决于发射极侧壁间隔滤波器的存在。提出了对超浅结器件的影响。
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The best-case power-delay products for polysilicon-contacted bipolar-transistor gates. A theoretical study The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process Delay analysis for BiCMOS drivers Comparing techniques for fabrication polysilicon contacted emitter bipolar transistors Thin base formation by double diffused polysilicon technology
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