B. van Schravendijk, J. de Jong, J. de Groot, P. Maillot
{"title":"Thin base formation by double diffused polysilicon technology","authors":"B. van Schravendijk, J. de Jong, J. de Groot, P. Maillot","doi":"10.1109/BIPOL.1988.51064","DOIUrl":null,"url":null,"abstract":"The method of double-diffused emitter-base formation is characterized. It is shown to be a viable technique for the fabrication of advanced bipolar transistors. The use of amorphous instead of polycrystalline silicon as the emitter contact material results in a shallower emitter-base junction and little effect of the boron diffusion on the obtained arsenic profile. The narrowing of the base yields a higher intrinsic base resistance for the same number of carriers leading to a decrease in current gain for the same intrinsic base resistance. The different processing of double diffusion compared to base implantation may also lead to a loss in emitter efficiency. Nevertheless uniformity of the basewidth seems to be excellent and good high-frequency characteristics (up to f/sub T/=15 GHz) are obtained.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
The method of double-diffused emitter-base formation is characterized. It is shown to be a viable technique for the fabrication of advanced bipolar transistors. The use of amorphous instead of polycrystalline silicon as the emitter contact material results in a shallower emitter-base junction and little effect of the boron diffusion on the obtained arsenic profile. The narrowing of the base yields a higher intrinsic base resistance for the same number of carriers leading to a decrease in current gain for the same intrinsic base resistance. The different processing of double diffusion compared to base implantation may also lead to a loss in emitter efficiency. Nevertheless uniformity of the basewidth seems to be excellent and good high-frequency characteristics (up to f/sub T/=15 GHz) are obtained.<>
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