I. Giangu, G. Stavrinidis, A. Stefanescu, A. Stavrinidis, A. Dinescu, G. Konstantinidis, A. Muller
{"title":"Pressure sensors based on high frequency operating GaN FBARs","authors":"I. Giangu, G. Stavrinidis, A. Stefanescu, A. Stavrinidis, A. Dinescu, G. Konstantinidis, A. Muller","doi":"10.1109/SMICND.2015.7355174","DOIUrl":null,"url":null,"abstract":"In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.
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