Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355149
V. Sundaramoorthy, E. Bianda, G. Riedel
Lifetime prediction of IGBT modules from their junction temperature is an important aspect to improve the reliability of power electronic systems. Here, methods to estimate the IGBT junction temperature from its electrical characteristics are discussed. A solution is also proposed to avoid explosion of IGBTs used in traction converters.
{"title":"A study to improve IGBT reliability in power electronics applications","authors":"V. Sundaramoorthy, E. Bianda, G. Riedel","doi":"10.1109/SMICND.2015.7355149","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355149","url":null,"abstract":"Lifetime prediction of IGBT modules from their junction temperature is an important aspect to improve the reliability of power electronic systems. Here, methods to estimate the IGBT junction temperature from its electrical characteristics are discussed. A solution is also proposed to avoid explosion of IGBTs used in traction converters.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129562066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355147
G. Brezeanu, M. Badila, F. Draghici, R. Pascu, G. Pristavu, F. Craciunoiu, I. Rusu
SiC devices' electrical properties used as sensing mechanisms are demonstrated for two types of sensors. A Schottky barrier diode (SBD) is proposed as a temperature sensor while a MOS capacitor is used for gas (hydrogen) detection. A layout with different active contacts, having 200, 300 and 400μm diameters and similar technology is designed and used for fabricating both sensors. An automatic high temperature system is developed to test the sensors up to 450°C. The main electrical parameters of the SiC devices designed to operate as sensors are extracted using dedicated programs. The temperature detection sensitivity of the SBD is in range of 1.52-2.13mV/°C. For the gas sensor, a sensitivity peak of 120% is achieved for a H2 concentration over 1000 ppm. An industrial temperature probe based on SiC SBD was tested to monitor furnace temperature in the 100-400°C range in a cement factory.
{"title":"High temperature sensors based on silicon carbide (SiC) devices","authors":"G. Brezeanu, M. Badila, F. Draghici, R. Pascu, G. Pristavu, F. Craciunoiu, I. Rusu","doi":"10.1109/SMICND.2015.7355147","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355147","url":null,"abstract":"SiC devices' electrical properties used as sensing mechanisms are demonstrated for two types of sensors. A Schottky barrier diode (SBD) is proposed as a temperature sensor while a MOS capacitor is used for gas (hydrogen) detection. A layout with different active contacts, having 200, 300 and 400μm diameters and similar technology is designed and used for fabricating both sensors. An automatic high temperature system is developed to test the sensors up to 450°C. The main electrical parameters of the SiC devices designed to operate as sensors are extracted using dedicated programs. The temperature detection sensitivity of the SBD is in range of 1.52-2.13mV/°C. For the gas sensor, a sensitivity peak of 120% is achieved for a H2 concentration over 1000 ppm. An industrial temperature probe based on SiC SBD was tested to monitor furnace temperature in the 100-400°C range in a cement factory.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128413943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355174
I. Giangu, G. Stavrinidis, A. Stefanescu, A. Stavrinidis, A. Dinescu, G. Konstantinidis, A. Muller
In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.
{"title":"Pressure sensors based on high frequency operating GaN FBARs","authors":"I. Giangu, G. Stavrinidis, A. Stefanescu, A. Stavrinidis, A. Dinescu, G. Konstantinidis, A. Muller","doi":"10.1109/SMICND.2015.7355174","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355174","url":null,"abstract":"In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114416945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355180
M. Volmer, M. Avram, A. Avram
This paper describes, based on a micromagnetic approach and experimental measurements, our advances in the handling and detection of magnetic nanoparticles used for biodetection in lab-on-a-chip devices. Structures made from nonmagnetic and magnetic materials are considered in this study and results that highlight the importance of the material nature and specific interaction between the beads and the sensor's structure are presented. The results are useful for the layout design of micrometric sized magnetic sensors.
{"title":"Simulation and experimental results on manipulation and detection of magnetic nanoparticles using planar hall effect sensors","authors":"M. Volmer, M. Avram, A. Avram","doi":"10.1109/SMICND.2015.7355180","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355180","url":null,"abstract":"This paper describes, based on a micromagnetic approach and experimental measurements, our advances in the handling and detection of magnetic nanoparticles used for biodetection in lab-on-a-chip devices. Structures made from nonmagnetic and magnetic materials are considered in this study and results that highlight the importance of the material nature and specific interaction between the beads and the sensor's structure are presented. The results are useful for the layout design of micrometric sized magnetic sensors.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132121224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355224
M. Mekheldi, S. Oussalah, A. Lounis, Nourredine Brihi
This paper presents a comparative study for two different n-in-p silicon particle detector structures in the purpose of evaluating the breakdown voltage of unirradiated devices candidate for high luminosity applications. The two structures based on the n-in-p technology with and without p-spray isolation between guard rings have been simulated on high resistivity silicon wafers. The simulated electrical characteristics current-voltage, for both structures, are compared for various parameters like, substrate thickness, substrate doping, guard ring depth, guard ring doping, oxide thickness, and oxide charge, under similar conditions. From the results of the simulation, we conclude that, in terms of leakage current, both structures behave similarly but in terms of breakdown voltage, n-in-p technology with p-spray shows better performances.
{"title":"A comparative study by TCAD simulation for two different n-in-p silicon particle detector structures","authors":"M. Mekheldi, S. Oussalah, A. Lounis, Nourredine Brihi","doi":"10.1109/SMICND.2015.7355224","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355224","url":null,"abstract":"This paper presents a comparative study for two different n-in-p silicon particle detector structures in the purpose of evaluating the breakdown voltage of unirradiated devices candidate for high luminosity applications. The two structures based on the n-in-p technology with and without p-spray isolation between guard rings have been simulated on high resistivity silicon wafers. The simulated electrical characteristics current-voltage, for both structures, are compared for various parameters like, substrate thickness, substrate doping, guard ring depth, guard ring doping, oxide thickness, and oxide charge, under similar conditions. From the results of the simulation, we conclude that, in terms of leakage current, both structures behave similarly but in terms of breakdown voltage, n-in-p technology with p-spray shows better performances.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114625109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355148
J. Millán, P. Friedrichs, A. Mihaila, V. Soler, J. Rebollo, V. Banu, P. Godignon
This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind Power and Solid-State Transformer applications. SiC diodes with voltage ranges between 1.7kV and 9kV have been designed and fabricated. On the other hand, SiC JFETs and, specially, SiC MOSFETs are also under development, and preliminary prototypes of 3.3 kV SiC MOSFETs are reported.
本文综述了近年来针对风力发电和固态变压器应用的高压sic基器件的研究进展。设计并制作了电压范围为1.7kV ~ 9kV的SiC二极管。另一方面，SiC jfet，特别是SiC mosfet也在开发中，并报道了3.3 kV SiC mosfet的初步原型。
{"title":"High-voltage SiC devices: Diodes and MOSFETs","authors":"J. Millán, P. Friedrichs, A. Mihaila, V. Soler, J. Rebollo, V. Banu, P. Godignon","doi":"10.1109/SMICND.2015.7355148","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355148","url":null,"abstract":"This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind Power and Solid-State Transformer applications. SiC diodes with voltage ranges between 1.7kV and 9kV have been designed and fabricated. On the other hand, SiC JFETs and, specially, SiC MOSFETs are also under development, and preliminary prototypes of 3.3 kV SiC MOSFETs are reported.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132699453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355159
V. Damian, T. Vasile, P. Logofatu
The paper presents an experimental set-up of a hyperspectral imaging system. Preliminary experiments in the domain have as purpose to test the capability of our monochromator with a 2D linear CCD camera, to create hyperspectral images. Using as an object an array of three LEDs of various colors, we have obtained the 3D hyperspectral images.
{"title":"Hyperspectral system for testing emissive photonic elements","authors":"V. Damian, T. Vasile, P. Logofatu","doi":"10.1109/SMICND.2015.7355159","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355159","url":null,"abstract":"The paper presents an experimental set-up of a hyperspectral imaging system. Preliminary experiments in the domain have as purpose to test the capability of our monochromator with a 2D linear CCD camera, to create hyperspectral images. Using as an object an array of three LEDs of various colors, we have obtained the 3D hyperspectral images.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122681173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355150
A. Nazarov, T. Rudenko
In this work we provide an overview of some features of operation junctionless MOSFETs, such as enhanced electron mobility in heavily doped narrow nanowire channels, steep subthreshold slope of such device associated with impact ionization process in the channel, and extraction of main electrical characteristics. Peculiar properties of random telegraph noise in junctionless MOSFET are reviewed separately.
{"title":"Nanowire junctionless silicon-on-insulator MOSFETs: Operation features and electrical characterization","authors":"A. Nazarov, T. Rudenko","doi":"10.1109/SMICND.2015.7355150","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355150","url":null,"abstract":"In this work we provide an overview of some features of operation junctionless MOSFETs, such as enhanced electron mobility in heavily doped narrow nanowire channels, steep subthreshold slope of such device associated with impact ionization process in the channel, and extraction of main electrical characteristics. Peculiar properties of random telegraph noise in junctionless MOSFET are reviewed separately.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115017472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355191
Christian Unger, M. Mocanu, Michael Ebli, M. Pfost
This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500 °C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
本文提出了一种适用于功率半导体器件在超过500°C的高温条件下表征的测量装置和组装技术。它的一个重要应用是宽禁带半导体的实验研究。测量结果显示为1200V SiC MOSFET和650V耗尽模式GaN HEMT。
{"title":"A setup for very high temperature measurements of power semiconductors exceeding 500 °C","authors":"Christian Unger, M. Mocanu, Michael Ebli, M. Pfost","doi":"10.1109/SMICND.2015.7355191","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355191","url":null,"abstract":"This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500 °C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"12 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123798890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/SMICND.2015.7355179
C. Ravariu, D. Dragomirescu, F. Babarada, D. Prelipceanu, B. Patrichi, Cristina Gorciu, D. Manuc, A. Salageanu
The main contribution of this paper is to highlight a new work regime of an optimised organic field effect transistor (OFET) respectively volume channel mode. If the device comprises a vertical n+p junction on insulator, the longitudinal conduction can be deviated by two gates. The carriers rejection from surface deep into the volume is limited by the metallurgical junction, via the top, bottom gates and deep contacts for source and drain. In respect with the electrodes biasing, a new work regime is defined. The conduction is allowed by a volume n-channel, for both negative gate voltages, with the advantage of interface conduction avoiding. A current density of 1.45μA/cm2 occurs in this situation for usual biasing. After the final analysis, a distinct device function is encountered - transistor with volume channel. The situation is analysed versus the traditional OFET case with neutral or accumulation channels.
{"title":"Organic field effect transistor OFET optimization considering volume channel conduction mechanism","authors":"C. Ravariu, D. Dragomirescu, F. Babarada, D. Prelipceanu, B. Patrichi, Cristina Gorciu, D. Manuc, A. Salageanu","doi":"10.1109/SMICND.2015.7355179","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355179","url":null,"abstract":"The main contribution of this paper is to highlight a new work regime of an optimised organic field effect transistor (OFET) respectively volume channel mode. If the device comprises a vertical n+p junction on insulator, the longitudinal conduction can be deviated by two gates. The carriers rejection from surface deep into the volume is limited by the metallurgical junction, via the top, bottom gates and deep contacts for source and drain. In respect with the electrodes biasing, a new work regime is defined. The conduction is allowed by a volume n-channel, for both negative gate voltages, with the advantage of interface conduction avoiding. A current density of 1.45μA/cm2 occurs in this situation for usual biasing. After the final analysis, a distinct device function is encountered - transistor with volume channel. The situation is analysed versus the traditional OFET case with neutral or accumulation channels.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125285205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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