Lan Nan, Koen Mouthaan, Y. Xiong, Jinglin Shi, S. C. Rustagi, B. Ooi
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引用次数: 43
Abstract
In modern CMOS technologies, metal dummy fills are required to maintain metal density uniformity and to planarize the layers. As frequency increases, the effect of the metal dummy fills on the CMOS integrated circuits or components should be taken into account. This work presents experimental results of the effect of metal dummy fills on the microwave behavior of spiral inductors fabricated in a standard 0.18-mum CMOS technology. The influences on the equivalent model parameters and the Q-factor are characterized based on measured S-parameters of inductors with and without metal dummy fills.
在现代CMOS技术中，需要金属假体填充来保持金属密度均匀性并使层平面化。当频率增加时，应考虑金属假人填充对CMOS集成电路或元件的影响。本文介绍了金属假人填充对标准0.18 μ m CMOS技术制造的螺旋电感器微波行为影响的实验结果。通过实测的金属假体填充和无金属假体填充对电感等效模型参数和q因子的影响进行了表征。
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