Package induced low-k delaminations: Numerical developments and experimental investigations to address FEBE compatibility fracture phenomena.

S. Gallois-Garreignot, V. Fiori, D. Nélias
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Abstract

The development of Cu/low-k interconnects to meet continuous tighter specifications (lower RC time delay, power consumption…) and consequently the introduction of mechanically weak materials is widely identified as a contributor of interfacial cracks propagating during manufacturing flow or qualification tests. Moreover, a raise in Front-End/Back-End (FE/BE) compatibility issues has been also observed and tends to narrow process windows from both Front-End to packaging steps.
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封装诱导的低k分层:数值发展和实验研究以解决FEBE相容断裂现象。
Cu/低k互连的发展,以满足持续更严格的规范(更低的RC时间延迟,功耗…),因此引入机械弱材料被广泛认为是在制造流程或资格测试期间界面裂纹传播的贡献者。此外,还观察到前端/后端(FE/BE)兼容性问题的增加,并倾向于缩小从前端到打包步骤的流程窗口。
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