J. Woo, Jeonghwan Song, Kibong Moon, Seokjae Lim, Daeseok Lee, Sangheon Lee, A. Prakash, H. Hwang, J. Baek, K. Kwon
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引用次数: 0
Abstract
In this paper, a bipolar resistive random access memory (RRAM) device with a fab-friendly materials stack (TiN/Ti/HfO2/TiN) and process in a via-hole substrate with 200 nm cell size was successfully demonstrated on an 8-inch wafer scale. Furthermore, the robust device characteristics with reliable switching uniformity and stability were experimentally confirmed at the wafer level. Finally, from the standpoint of array architecture, the fabricated memory cell was evaluated with various selector devices such as a conventional silicon-based transistor and a newly developed tunneling-based diode device.
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