Z. Stanojevic, O. Baumgartner, F. Schanovsky, G. Strof, C. Kernstock, M. Karner, J. Medina, F. Ruiz, A. Godoy, F. Gámiz
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引用次数: 1
Abstract
We present the first truly full-band approach to solving the subband Boltzmann transport (SBTE) equation in three-dimensional phase space. The solution is applied to investigate the evolution of the FDSOI MOSFET towards the 7nm node. Our findings show that single-gate FDSOI technology can be effectively scaled down to the 14 nm node, because the on-current gains are large enough to offset the SS-degradation. Beyond 14 nm a double-gate thin-body geometry is required to maintain electrostatic control.
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