C. Medina-Bailón, C. Sampedro, J. Padilla, A. Godoy, L. Donetti, F. Gámiz, A. Asenov
{"title":"MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections","authors":"C. Medina-Bailón, C. Sampedro, J. Padilla, A. Godoy, L. Donetti, F. Gámiz, A. Asenov","doi":"10.1109/ULIS.2018.8354758","DOIUrl":null,"url":null,"abstract":"As electronic devices approach the nanometer scale, quantum transport theories have been recognized as the best option to reproduce their performance. Other possible trend, mainly focused on reducing the computational effort, is the inclusion of quantum effects in semi-classical simulators. This work presents a comparison between a NEGF simulator and a MS-EMC tool including S/D tunneling both applied on a DGSOI transistor.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
As electronic devices approach the nanometer scale, quantum transport theories have been recognized as the best option to reproduce their performance. Other possible trend, mainly focused on reducing the computational effort, is the inclusion of quantum effects in semi-classical simulators. This work presents a comparison between a NEGF simulator and a MS-EMC tool including S/D tunneling both applied on a DGSOI transistor.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
