{"title":"New method for self-heating estimation using only DC measurements","authors":"C. A. Mori, P. Agopian, J. Martino","doi":"10.1109/ULIS.2018.8354756","DOIUrl":null,"url":null,"abstract":"This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.
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