G. Umana-Membreno, N. Akhavan, J. Antoszewski, L. Faraone, S. Cristoloveanu
{"title":"Towards a magnetoresistance characterization methodology for 1D nanostructured transistors","authors":"G. Umana-Membreno, N. Akhavan, J. Antoszewski, L. Faraone, S. Cristoloveanu","doi":"10.1109/ULIS.2018.8354750","DOIUrl":null,"url":null,"abstract":"A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.
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