K. Akarvardar, B. Dufrene, S. Cristoloveanu, J. Chroboczek, P. Gentil, B. Blalock, M. Mojarradi
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引用次数: 0
Abstract
Low-frequency noise characteristics of four-gate transistors (G/sup 4/-FETs) are presented distinguishing the surface conduction (MOSFET mode) and volume conduction (JFET mode). As the conducting channel moves from the surface to the bulk we observe that: (i) the noise level dramatically decreases; and (ii) the nature of the noise changes. The validity of the existing noise models for different conduction modes is discussed.
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