V. Joshi, M. Ohno, J. Ida, Y. Nagatomo, K. Strauss
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Abstract
We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
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