{"title":"A study of non-linearity effects of collector and base currents in SiGe heterojunction bipolar transistor","authors":"A.F.A. Rahim, M. R. Hashim, A.F.A. Rahim","doi":"10.1109/SMELEC.2002.1217843","DOIUrl":null,"url":null,"abstract":"A material system that appears to have a tremendous advantage and compatible with Si technology is the Si-SiGe system. One problem in npn SiGe HBT is boron out-diffusion from the base. Boron dopant that out-diffuses into the emitter and collector during SiGe growth and subsequent heat treatment results in the formation of parasitic energy barriers at the emitter/base and base/collector junctions. These barriers suppress the injection of electrons from the emitter to the collector which result in reduced collector current. In this work, a study on the non-linearity effects of the collector and base currents of the SiGe HBT is performed using a high performance process and device simulator SILVACO. The understanding of these effects is very important in the fabrication of high speed devices. The characteristics shows that the more out-diffusion of boron (B) at the emitter/base and base/collector junctions, the more non-ideal the currents. The underlying explanation for these trends will be discussed.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A material system that appears to have a tremendous advantage and compatible with Si technology is the Si-SiGe system. One problem in npn SiGe HBT is boron out-diffusion from the base. Boron dopant that out-diffuses into the emitter and collector during SiGe growth and subsequent heat treatment results in the formation of parasitic energy barriers at the emitter/base and base/collector junctions. These barriers suppress the injection of electrons from the emitter to the collector which result in reduced collector current. In this work, a study on the non-linearity effects of the collector and base currents of the SiGe HBT is performed using a high performance process and device simulator SILVACO. The understanding of these effects is very important in the fabrication of high speed devices. The characteristics shows that the more out-diffusion of boron (B) at the emitter/base and base/collector junctions, the more non-ideal the currents. The underlying explanation for these trends will be discussed.