Yi Wen, Xiaojie Xu, Hao Zhu, Xuan Li, Xiaochuan Deng, Fei Yang, Jun-tao Li, Bo Zhang
{"title":"Design and Characteristics of an Etching Field Limiting Ring for 10kV SiC Power Device","authors":"Yi Wen, Xiaojie Xu, Hao Zhu, Xuan Li, Xiaochuan Deng, Fei Yang, Jun-tao Li, Bo Zhang","doi":"10.1109/SSLChinaIFWS49075.2019.9019780","DOIUrl":null,"url":null,"abstract":"For ultra-high voltage SiC devices of 10kV and above, the length of conventional FLR even reaches up to millimeters, which impedes the miniaturization and development in ultra-high voltage applications. In this paper, a novel termination structure of the Etching Uniform Field Limiting Ring (EU-FLR) for 10kV SiC power device is proposed and analyzed based on the theory of charge field modulation. The blocking capability achieves at 14.2kV and the EU-FLR exhibits a reduction of more than 30% in size compared with the conventional FLRs. The voltage efficiency factor η1 of EU-FLR is 90% and the area efficiency factor η2 is 17.8V/μm, respectively. The influence of the pivotal structural parameters of EU-FLRs on termination protection efficiency has been analyzed and researched by TCAD Silvaco.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
For ultra-high voltage SiC devices of 10kV and above, the length of conventional FLR even reaches up to millimeters, which impedes the miniaturization and development in ultra-high voltage applications. In this paper, a novel termination structure of the Etching Uniform Field Limiting Ring (EU-FLR) for 10kV SiC power device is proposed and analyzed based on the theory of charge field modulation. The blocking capability achieves at 14.2kV and the EU-FLR exhibits a reduction of more than 30% in size compared with the conventional FLRs. The voltage efficiency factor η1 of EU-FLR is 90% and the area efficiency factor η2 is 17.8V/μm, respectively. The influence of the pivotal structural parameters of EU-FLRs on termination protection efficiency has been analyzed and researched by TCAD Silvaco.
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