Mechanism for early failure in Cu dual damascene structure

Dae-Yong Kim, S.S. Wong
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引用次数: 4

Abstract

An infrared microscope and a convergent electron beam technique have been applied to detect and analyze the weak via in a Cu dual Damascene contact chain. It is shown that the early failure is due to cracking in the barrier metal layer, which opens up a fast diffusion path along the interface between the barrier metal and the dielectric. The subsequent opening and, in some cases, self-recovery of the via is also discussed. This early failure mode may impose severe limitation on the scalability of the dual Damascene structure.
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铜双大马士革结构早期破坏机制
利用红外显微镜和会聚电子束技术对铜双大马士革接触链中的弱通孔进行了检测和分析。结果表明,早期失效主要是由于阻挡金属层的开裂,在阻挡金属和介电介质之间的界面上开辟了一条快速扩散路径。随后的打开和在某些情况下,通过自我恢复也进行了讨论。这种早期失效模式严重限制了双大马士革结构的可扩展性。
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The application of ALD WN/sub x/C/sub y/ as a copper diffusion barrier Low-pressure CMP for reliable porous low-k/Cu integration Mechanism for early failure in Cu dual damascene structure Leakage and breakdown mechanisms in Cu damascene with a bilayer-structured /spl alpha/-SiCN//spl alpha/-SiC dielectric barrier Linewidth-narrowing due to 193 nm resist deformation during etch of spin-on low-k dielectrics
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