Soon-Young Oh, J. Yun, Yong-Jin Kim, Won-Jae Lee, A. Tuya, H. Ji, Ui-Sik Kim, Han-Seob Cha, S. Heo, Jeong‐gun Lee, G. Han, Yoo-Jeong Cho, Yeong Cheol Kim, Jin-Suk Wang, H. Lee
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引用次数: 0
Abstract
In this paper, a novel Ni/Co/Ni/TiN structure to improve the thermal stability of NiSi by forming highly thermal stable ternary phase, i.e., (Co/sub x/Ni/sub 1-x/)Si/sub 2/ especially at the top region of NiSi is proposed. The Ni/Co/Ni/TiN structure is very promising for the nanoscale MOSFET technology which needs the ultra shallow junction and high temperature post silicidation processes.
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