Non-contact measurement of sheet resistance and leakage current: applications for USJ-SDE/halo junctions

Extended Abstracts of the Fifth International Workshop on Junction Technology Pub Date : 2005-06-07 DOI:10.1109/IWJT.2005.203876

V. Faifer, M. Current, T. Nguyen, T. Wong, V. Souchkov

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引用次数: 3

Abstract

A powerful new tool for non-contact analysis of sheet resistance and leakage current in p-n junctions, based on junction photo-voltage analysis of carrier recombination, carrier spreading and loss in the junction, has been developed. The method has been demonstrated to be effective in measurements of p-n junctions from /spl sim/10 nm to >1 nm and over a dose range of /spl sim/10/sup 11/ to >10/sup 15/ ions/cm/sup 2/. RsL metrology is the first tool to provide dose metrology coverage over the full depth and dose range of CMOS transistor doping. The stability of the measurement results in an Rs repeatability for all junction conditions and does not require surface preparation, such as oxide strip, prior to measurement. RsL methods provide direct evaluation of junction leakage current, which is especially useful for shallow junction technology evaluation. The RsL probe has been incorporated into a fully-automated tool for in-line pilot line and production process development and production control applications.

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片电阻和漏电流的非接触测量:USJ-SDE/光晕结的应用

基于载流子复合、载流子扩展和损耗的结光电压分析，开发了一种强大的非接触分析p-n结片电阻和漏电流的新工具。该方法已被证明是有效的测量p-n结从/spl sim/10 nm到>1 nm和剂量范围为/spl sim/10/sup 11/到>10/sup 15/ ions/cm/sup 2/。RsL计量是第一个在CMOS晶体管掺杂的全深度和剂量范围内提供剂量计量覆盖的工具。测量的稳定性导致所有结条件下的Rs可重复性，并且不需要在测量前进行表面处理，例如氧化条。RsL方法提供了直接的结漏电流评估，对浅结技术评估特别有用。RsL探头已被整合到一个全自动工具中，用于在线中试线和生产过程开发以及生产控制应用。

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Extended Abstracts of the Fifth International Workshop on Junction Technology

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