{"title":"Silicon on SiO/sub 2/ by two step thermal bonding (TSTB) process","authors":"Xu Xiao-li, Zhan Juan, Tong Qin-yi","doi":"10.1109/SOI.1988.95406","DOIUrl":null,"url":null,"abstract":"The bonding process and mechanism and the electrical and material properties of the Si on SiO/sub 2/ substrate produced by two-step thermal bonding technology are described. Experimental results on the relation between fracture strength and treatment temperature are reported. They show that the bonding process consists of two main steps. The first step is a low-temperature initial bonding process in which polymerization of silanol bonds occurs. The second step is a high-temperature process (900-1250 degrees C) in which the mutual-diffusion process acts as the primary means of grain boundary rearrangement and void elimination. The mating surface contact area grows to a large fraction of bonding area, which increases the fracture strength greatly. The experiments show that the process can be applied to other semiconductors and insulators, such as GaAs, quartz, and silicon nitride.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The bonding process and mechanism and the electrical and material properties of the Si on SiO/sub 2/ substrate produced by two-step thermal bonding technology are described. Experimental results on the relation between fracture strength and treatment temperature are reported. They show that the bonding process consists of two main steps. The first step is a low-temperature initial bonding process in which polymerization of silanol bonds occurs. The second step is a high-temperature process (900-1250 degrees C) in which the mutual-diffusion process acts as the primary means of grain boundary rearrangement and void elimination. The mating surface contact area grows to a large fraction of bonding area, which increases the fracture strength greatly. The experiments show that the process can be applied to other semiconductors and insulators, such as GaAs, quartz, and silicon nitride.<>
介绍了采用两步热键合技术制备的Si on SiO/ sub2 /基板的键合工艺、键合机理、电学性能和材料性能。报道了断裂强度与处理温度关系的实验结果。它们表明，键合过程包括两个主要步骤。第一步是低温初始键合过程，其中硅烷醇键发生聚合。第二步是高温过程(900-1250℃)，其中相互扩散过程是晶界重排和空洞消除的主要手段。配合面接触面积增大到结合面积的很大一部分，大大提高了断裂强度。实验表明，该工艺可以应用于其他半导体和绝缘体，如砷化镓、石英和氮化硅。
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