A. Muto, H. Ohji, T. Kawahara, T. Maeda, K. Torii, H. Kitajima
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引用次数: 1
Abstract
In this study, we investigated the growth manner of poly-Si/poly-SiGe layered films on HfAlO/sub x/ films with various Hf contents. The effect of the poly-SiGe gate electrode on FET performances was also evaluated.
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