{"title":"Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides","authors":"K. Kukli","doi":"10.1109/IWGI.2003.159195","DOIUrl":null,"url":null,"abstract":"In this paper, atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides HfO/sub 2/ and ZrO/sub 2/ thin films were studied.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides HfO/sub 2/ and ZrO/sub 2/ thin films were studied.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
