Leakage power evaluation of FinFET-based FPGA cluster under threshold voltage variation

M. M. El-Din, H. Fahmy, Y. Ismail, N. Gamal, H. Mostafa
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引用次数: 1

Abstract

The leakage power of FinFET-based FPGA cluster is studied and evaluated with technology node 14nm. The impact of threshold voltage variation, considering die-to-die variations, on the leakage power is reported after simulating a 2-Bit adder benchmark and comparing the results with the dynamic power consumption. Simulation results show, with the leakage power segmentation, that the multiplexers are the most consuming components for leakage power in the FPGA cluster architecture. Some leakage power control techniques are investigated including transistor stacking, minimum leakage vector, and gate sizing. The effect of each technique on the leakage power, leakage power variation, and the delay is reported and compared with the original design.
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阈值电压变化下基于finfet的FPGA集群泄漏功率评估
采用14nm技术节点对基于finfet的FPGA集群的泄漏功率进行了研究和评估。通过模拟一个2位加法器基准,并将结果与动态功耗进行比较,报告了考虑模对模变化的阈值电压变化对泄漏功率的影响。仿真结果表明,在进行泄漏功率分割后,多路复用器是FPGA集群结构中消耗泄漏功率最大的器件。研究了一些泄漏功率控制技术,包括晶体管堆叠、最小泄漏矢量和栅极尺寸。报告了每种技术对漏功率、漏功率变化和延迟的影响,并与原设计进行了比较。
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